To realize, investigate and optimize light-emitting diodes based on the following silicon-related materials: porous Si, Si/Si1-xGex quantum dot structures and Er-doped Si and Si/Si1-xGex for their potential in optical interconnects for IC's. At the end of the project, a comparison with III/V-based LEDs regarding the quantum efficiency, lifetime, reproducibility, fabrication aspects, compatibility with CMOS, and other aspects relevant for technological implementation will be presented to provide a platform for a decision on the industrial potential of Si-based emitters.
The availability of efficient light emitters suitable for direct integration into Si micro-electronic chips will undoubtedly lead to a major revolution in optoelectronics and open many new business opportunities.
In this exploratory project, the crucial problem of direct light emission from Si-based materials is addressed at the device level. Emphasis is laid on CMOS compability with the prospect of an integrated Si technology for multi-purpose use in micro- and optoelectronics in mind.
Prof. Dr. Heinrich Kurz
Institut für Halbleitertechnik Lehrstuhl II
D - 52074 Aachen
tel:+49 / 241 80 7890
fax: +49 / 241 8888 246
Start date:1 October 96
Duration: 21 months - COMPLETED
|Welcome to the new
Information Society Technologies Programme (IST)
|Our new activities in the IST Programme: |
Future & Emerging Technologies
This document is located at /esprit/src/22644.htm
It was last updated on 28 September 1999, and is maintained by email@example.com