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Esprit Project 28824 - SIBOIA
Silicon based optical interconnect architecture

Keywords: MEL-ARI Optoelectronic Interconnects for ICs, Si-based optoelectronics, silicon-on-insulator, Er-doped Si, SiGe quantum dots

Within the project an all-silicon-based emitter-waveguide-detector system for optical interconnects at 1.54 µm will be realised. The components are based on technologies compatible to the standard CMOS technology at the most relevant wavelength for optical fibre communication. The envisaged system components are i) Erbium doped, electrically driven Si/SixGe1-x waveguide emitters at 1.54 µm, ii) low-loss Si/SixGe1-x and silicon-on-insulator (SOI) waveguides with Si as the guiding layer, and iii) Si/SixGe1-x(C) on SOI waveguide detectors with high efficiencies achieved via the incorporation of self-assembled Ge islands. The emitter and detector structures are prepared by molecular beam epitaxy (MBE) on Si and pre-patterned SOI substrates, on which ICs can be pre- or post-processed. The project aims for the realisation of stimulated emission from electrically excited Er-doped Si/SixGe1-x waveguide structures. The industrial potential of this approach concerning technical performance, reproducibility, manufacturability and compatibility to CMOS will be assessed.

Contact Point
Prof. H. Kurz
Gesellschaft für Angewandte Mikro- und Optoelektronik
(AMO) GmbH
Huyskensweg 25
D-52074 Aachen
e-mail: amo@amo.de

tel: +49 / 241 886 7200
fax: +49 / 241 886 7560

Start date:1 September 98
Duration: 24 months

This document is located at /esprit/src/28824.htm
It was last updated on 30 August 1999, and is maintained by carla.moris@dg13.cec.be