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This site was last updated 26 October 2000
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The serial nature of conventional circuit architectures results in long interconnection lines on the chips, with most of the devices being idle at any one instant. In combination with the continuous downscaling of ICs, this has resulted in electrical interconnects representing a formidable bottleneck to further performance increase sand miniaturisation. Research activities therefore seek to combine optical and electrical interconnects to alleviate some of the above bottlenecks and obtain circuits with higher functionality and better performance. It is also likely that non-conventional circuit architectures, such as hybrid parallel/serial, will be required to take full advantage of optoelectronic interconnects. The emphasis throughout will be on research approaches that could lead to cost effective, manufacturable and practical solutions.
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Five projects have recently been launched. These projects are proposing various hybrid solutions for inter/intra-chip optoelectronic interconnects. Other work concentrates on the monolithic integration of emitter sources on silicon by heteroepitaxial growth of GaAs.
Work on traditional sources such as GaAs VCSELs and LEDs, as well as on alternative sources such as SiGe, porous silicon and Er-doped silicon, will also be carried out to assess the potential for the future development of each technology.
Phase one of the optoelectronic interconnects cluster will last two years. At the end of year one and year two (autumn 1997 and autumn 1998 respectively), an international, open workshop will be organised to present the results.
The projects although contractually independent, are stronly linked for obvious technical reasons. Inorder to make the management of such projects clusters effective, a STEERING COMMITTEE has been created, and WORKING GROUPS across projects on specific topics are formed.
Follow the links below to read the synopses of the five cluster projects:
Pierpaolo Malinverni
fax +32 / 2-296-83.90
email pierpaolo.malinverni@ec.europa.eu
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This site was last updated 20 November 2000
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MELARI and NID supports innovative research aimed at the development of new concepts for information processing systems operating at the nano-scale. NID covers any research field that could contribute in shaping future visions for information processing nano-systems, from quantum electronics to nano-mechanics and biology. It gives emphasis to radically new approaches and cross-disciplinary integration. There are three major inter-related specific objectives:
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Project |
Project |
Title |
| CHARGE | 22953 | The Coulomb Blockade Applied to the Realisation of Electronics Synopsis - Homepage |
| FASEM | 23214 | Fabrication and Architecture of Single Electron memories Synopsis - Homepage |
| LASMEDS | 22955 | Fabrication of elementary molecular electronic devices Synopsis - Homepage |
| QUADRANT | 23362 | Quantum Devices for Advanced Nano-electronic Technology Synopsis - Homepage |
| QUEST | 23274 | Quantum Electronics using Scanning Tunnelling microscopy based lithography Synopsis - Homepage |
| RSFQ-HTS | 23429 | High Temperature Superconducting Rapid Single Flux Quantum Logic Synopsis - Homepage |
| SIQUIC | 22987 | Silicon Quantum Integrated Circuits Synopsis - Homepage |
| SPIDER | 23307 | Spin Dependent Nano-Electronics Synopsis - Homepage |
| LOCOM | 28844 | Logic Circuits with Reduced Complexity based on Devices with Higher Functionality Synopsis - Homepage |
| SPINUP | 29097 | Semiconductor Processing by imprint of ultrasmall patterns Synopsis - Homepage |
| NANOTECH | 28785 | Development of Nanoimprinting technique suitable for large area mass production of nm-scale patterns Synopsis - Homepage |
| ANSWERS | 28667 | Autonomous Nanoelectronic systems with extended replication and signalling Synopsis - Homepage |
| Q-SWITCH | 30960 | Electron Waveguides for Quantum-based Switching Applications Synopsis - Homepage |
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| Acronym | Number | Title |
| MICROGUN | 20227 | Low-energy coherent electron microguns: Organic microsystems and nanostructures Synopsis - Homepage |
| NANCAR | 20084 | Nanolithography using chemically amplified resists Synopsis - Homepage |
| NANOWIRES | 23238 | Conductance characteristics and mass fabrication of Nanoscale integrated circuit nanowires Synopsis - Homepage |
| QUANTECS | 6312 | Quantised Electronics - Devices and physical phenomena with potential application in the processing, storage and transmission of information using single electrons and photons |
| LATMIC II | 6536 | Lateral Microstructures: Fabrication, Low Dimensionality Effects and Application to III-V Devices |
| NANOPT | 6719 | Nanometre Structures for Future Optoelectronic Applications |
| ADEQUAT | 7236 | Advanced Developments for 0.25 micron CMOS Technologies |
| SOLDES | 7260 | Self-Organising Low-Dimensional Electronic Structures |
| SMALL STRUCTURES | 8050 | Novel Phenomena in Small Structures |
| PRONANO | 8523 | Processing on a Nanometre Scale |
| SMART | 8659 | Surface Memories Using Atomically Resolving Techniques |
| SETTRON | 9005 | Single Electronics; Electronic properties of ultraminiature semiconductor and metal structures in 10nm range |
| NOVA | 9159 | Novel Architectures for 0.18 micron Devices |
| VAHMOS 2000 (project running until 31-12-99) |
22495 | The vertical advanced heterojunction MOS transistor as a building block for CMOS from the year 2000 on Synopsis - Homepage |
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Ramón Compañó
European Commission DG INFSO - F1
IST Programme - Future and Emerging Technologies
fax +32-2-296-83.90
email : ramon.compano@ec.europa.eu
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This document is located at /esprit/src/melari.htm
It was last updated on 29 November 2000, and is maintained by
Pierpaolo Malinverni - email: pierpaolo.malinverni@ec.europa.eu
Ramón Compañó - email : ramon.compano@ec.europa.eu