Silicon Quantum Information Processing

Objective

It is the aim of the proposal to measure the T_2 lifetime for the spin of the outer valence electron of a sodium atom placed in silicon MOSFET that may be used to create a system of qubits for low temperature quantum computing.
Electron paramagnetic resonance will be used to measure the T_2 lifetime. It is the aim of the proposal to measure the T_2 lifetime for the spin of the outer valence electron of a sodium atom placed in silicon MOSFET which may be used to create a system of qubits for low temperature quantum computing. Electron paramagnetic resonance will be used to measure the T_2 lifetime.

OBJECTIVES
1. Measure the T_2 lifetime of the outer valence electron of a sodium atom placed in a MOSFET;
2. Calculate the T_2 lifetime of the outer valence electron of a sodium atom placed in a MOSFET.

DESCRIPTION OF WORK
The aim of this proposal is to use the spin of the outer valence electron of a sodium atom placed in a silicon MOSFET to create a system of qubits for low temperature information processing and quantum computing.
Standard CMOS processing techniques will be used to fabricate simple MOSFET devices with Na in the oxide to allow electron paramagnetic resonance to be used to measure the T_2 lifetime. Calculations will also be performed to estimate the T_2 lifetime.

Fields of science

• natural scienceschemical sciencesinorganic chemistryalkali metals
• engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringcomputer hardwarequantum computers
• natural scienceschemical sciencesinorganic chemistrymetalloids

Programme(s)

• FP5-IST - Programme for research, technological development and demonstration on a "User-friendly information society, 1998-2002"

Topic(s)

• IST-2002-6.2.1 - Quantum Information Processing and Communication (QIPC)

Call for proposal

Funding Scheme

Coordinator

Participants (1)