Nanoelectronics Research on European level


Nanoelectronics Research at European levelpicture-136.jpg

Project Classification

 

TECHNOLOGIES

 

ATHENIS - Automotive Tested High Voltage Embedded Non-volatile memory Integrated SoC
The purpose of ATHENIS is to provide proof of concept for the industry’s first SoC technology platform that can surmount these integration barriers. The ATHENIS SoC technology platform is intended to be the first in meeting the combination of all of the harshest requirements including full reverse polarity capability at the low cost of CMOS, application voltages up to 120V, currents up to 10A, temperatures up to 200°C, embedded non-volatile memory, chip-level ESD up to =8kV HBM, and high logic gate densities.
Total Budget: 8 M€
EC Contribution: 5.1 M€
 
CONCEPTGRAPHENE - New Electronics Concept: Wafer-Scale Epitaxial Graphene
The concept of this project is to unlock the potential of epitaxial graphene on silicon carbide (SiC) for development of scalable electronics with the view to develop graphene-based devices & circuits with a non-conventional functionality. The strategy is to explore two promising directions of graphene-based technology: (i) the development of large-scale graphene wafers for manufacturing high-density of devices on a single SiC wafer, and (ii) the development of hybrid circuits for applications of graphene in spintronics and metrology by exploiting the flexibility for design offered by the large area of graphene on SiC.
Total Budget: 4.5 M€
EC Contribution: 3.2 M€
 
DOTFIVE - Towards 0.5 TeraHertz Silicon/Germanium Heterojunction Bipolar Technology Dotfive
To demonstrate the realization of SiGe Heterojunction Bipolar Transistors (HBTs) operating at a maximum frequency close to 0.5 THz (500 GHz) at room temperature, and evaluate the achievable performance of integrated mmWave circuits using those HBTs.
Enabling the future development of communication, imaging or radar Integrated Circuits working at frequencies up to 160 GHz.
Total Budget: 14.7 M€
EC Contribution: 9.7 M€
 
DUALLOGIC - Dual-channel CMOS for (sub)-22nm high performance logic
The aim of the project is to develop a dual-channel CMOS technology comprising high channel mobility (high-μ) Ge pMOS and III-V compound semiconductor nMOS transistors co-integrated on the same complex engineered substrate on Si. This offers a high performance booster as an option for the 22 nm technology.
Total Budget: 9.1 M€
EC Contribution: 5.8 M€
 
ELITE - Extended Large (3D) Integration Technology
ELITE aims at miniaturization and density increase beyond Moore by means of exhaustive die stacking. It takes as development vehicle an advanced solid-state drive which will widely substitute traditional hard disk drives for purpose of mobile and hand-held applications and which is considered as the enabler of the up-coming era of mobile data.
Total Budget: 5.63 M€
EC Contribution: 3.6 M€
 
GOSSAMER - Gigascale Oriented Solid State flAsh Memory for EUrope Gossamer
The aim of this project is to develop the technology for very high density Non Volatile Memories for mass storage applications down to the 2X nm technology node. The main challenge is the integration of the different new materials, like tunnel dielectric, trapping layer, top dielectric, metal gate at the target technology node and the achievement of an acceptable trade-off between functionality and reliability (e.g. charge retention and endurance).
Total Budget: 21.5 M€
EC Contribution: 13.1 M€
 
HiPoSwitch - GaN-based normally-off high power switching transistor for efficient power converters hiposwitch-logo.jpgThe proposed project aims for the exploitation of novel gallium nitride (GaN) transistors for advanced switched power supplies. High voltage normally-off GaN power devices on Si substrates in vertical device architecture will be developed and its technology transferred to an European industrial environment.
Total Budget: 5.6M€
EC Contribution: 3.6 M€
 
MACALO - Magneto Caloritronics
The primary goals of MACALO are to produce a working prototype of a computer simulation tool to help optimise integrated magnetoelectronic device design parameters at the nanoscale and to design nano-scale magnetoelectronic RF oscillators with different combinations of desirable properties, optimisable subsequently (through further company research) for specific applications in wireless communication devices.
Total Budget: 4.1 M€
EC Contribution: 3.1 M€
 
 
This project aims at demonstrating the disruptive concept of the "storage track memory", which proposes to store information in DW sequences moving synchronously under current in patterned magnetic tracks. It reproduces the successful data sector memory organization of a hard disk in a solid state device with no mechanically moving parts.
Total Budget: 3.1 M€
EC Contribution: 2.2 M€
 
NANOFUNCTION - Beyond CMOS Nanodevices for Adding Functionalities to CMOS
The NANOFUNCTION Network of Excellence aims to integrate at the European level the excellent European research laboratories in order to strengthen scientific and technological excellence in the field of novel nanoelectronic materials, devices and circuits for developing new integrated functions and disseminate the results in a wide scientific and industrial community.
Total Budget: 3.5 M€
EC Contribution: 2.8 M€
 
NANOPACK - Nano Packaging Technology for Interconnects and Heat Dissipation
The aim of the project is to develop new technologies and materials for low thermal resistance interfaces and electrical interconnects by exploring systems such as carbon nanotubes, nanoparticles and nano-structured surfaces.
Total Budget: 11.1 M€
EC Contribution: 7.4 M
 
NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
The aim of the project is to integrate at the European level the excellent European research laboratories and capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs) and disseminate the results in a wide scientific and industrial community.
Total Budget: 5.5 M€
EC Contribution: 4.3 M€
 
NEMIAC - Nano-Electro-Mechanical Integration And Computation1nemiaclogo.png
NEMIAC proposes a solution based on nano-electromechanical (NEM) switches with practically zero leakage, abrupt switching and high on-current suitable for stand-alone embedded systems as well as 3-D integration with CMOS.
Total Budget: 3.9 M€
EC Contribution: 2.4 M€

Fact sheet

SMARTPOWER - Smart integration of GaN & SiC high power electronics for industrial and RF applicationssmartpowerlogo.jpg
The goal of SMARTPOWER is to carry out the packaging and thermal management developments required to achieve the efficient and cost-effective implementation of SiC- and GaN-based power modules respectively into industrial power inverters and RF transmitters systems.
Total Budget: 7.3 M€
EC Contribution: 5.0 M€
 
STEEPER - Steep subthreshold slope switches for energy efficient electronics
STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to-band tunnelling (tunnel FETs), with the aim of reducing the operation voltage of nanoelectronic circuits to sub-0.5V, and their power consumption by one order of magnitude. STEEPER focuses on two technology tracks, united by same device principle, shared performance boosters, and compatibility with silicon CMOS.
Total Budget: 6.1 M€
EC Contribution: 4 M€
 
SQWIRE - Silicon Quantum Wire Transistors
Study of manufacturability of junctionless and tunnel-barrier nanowire transistors and development of associated software. The partners are: Tyndall National Institute(IE), Intel-IPLS (IE), CEA-LETI (FR), SOITEC (FR), INP Grenoble (FR), IMEC (BE), Magwel (BE), Universitat Rovira I Virgili (ES)
Total Budget: 4.5M€
EC Contribution: 3.16M€
WADIMOS - Wavelength Division Multiplexed Photonic Layer on CMOS
The aim of the project is to develop a generic technology for the realization of complex electro-photonic integrated ICs using standard CMOS processing technologies.
Total Budget: 3.2 M€
EC Contribution: 2.3 M€