GOSSAMER project : Gigascale Oriented Solid State flAsh Memory for EuRope”: Main results are now available!
The project addresses for the first time the development of large size NAND Flash memories based on the charge trapping mechanism, instead of the conventional floating gate concept, for technology generations in the range of 36-28nm. The project was started in 2008 with the target to develop a NAND Flash memory technology for mass storage based on the charge trapping mechanism, instead of the conventional floating gate concept, addressing technology generations in the range of 36-28nm. The final objective of the project was to demonstrate the potential of the concept on demonstrator, realized by the industrial partners, with a target size close to the foreseen upper limit of the technology, in the order of the Gigabyte (=8 Gigabit). To see the results : http://www.fp7-gossamer.eu/index.php?id=141