STANFORDUABProject reference: 274213
Funded under :
Research in Nanoelectronics: High-k Materials and High-Mobility-Channel CMOS devices
Total cost:EUR 149 553,2
EU contribution:EUR 149 553,2
Topic(s):FP7-PEOPLE-2010-IOF - Marie Curie Action: "International Outgoing Fellowships for Career Development"
Call for proposal:FP7-PEOPLE-2010-IOFSee other projects for this call
Funding scheme:MC-IOF - International Outgoing Fellowships (IOF)
"For several decades, silicon semiconductor devices have been scaled down to achieve higher device density and performance. As a result, alternative gate oxides with high dielectric constant (high-k), which can prevent power dissipation resulting from direct quantum mechanical tunneling across the dielectric layer, will replace silicon dioxide which has been used as a gate dielectric in metal-oxide-semiconductor field effect transistors. Deposited hafnium oxide-based insulators are currently the most promising high-k materials for MOS device applications. However, it has been consistently observed that high-k based MOSFETs have problems such as reduced mobility of electronic carriers in the transistor channel, difficulty in setting the threshold voltage (Vth) for CMOS devices, Vth instability, and other device reliability problems. Further improvements require a fundamental understanding of these phenomena.
The second aim of this work is the study of Materials for High-Mobility-Channel MOS. Due to their superior properties such as high electron and hole mobility, Ge and III-V materials have been drawing much attention as a high-mobility-channel layer in the future MOS technology. However, there are some major issues that need to be solved to advance the development of high-mobility-channel MOS such as growth of good quality high k dielectric layer with low interface states"
EU contribution: EUR 149 553,2
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