CONATProject reference: 299094
Funded under :
Conduction Mechanisms in Advanced MOS Technologies
Total cost:EUR 250 106
EU contribution:EUR 250 106
Call for proposal:FP7-PEOPLE-2011-IIFSee other projects for this call
Funding scheme:MC-IIF - International Incoming Fellowships (IIF)
"Silicon-based technologies are approaching their physical limits, and technology breakthroughs, in terms of materials and processes, will be required as device sizes reach the nano-scale frontier. To face these challenges, a new generation of devices based on a clever combination of selected materials is currently under consideration worldwide. The aim of this project is to investigate the conduction mechanisms, in connection with degradation and breakdown characteristics, of Metal Gate/High-K structures on III-V substrates intended for applications in future MOS transistors. This aspect is primary obstacle to the successful incorporation into mainstream semiconductor process. To the date, no systematic study about these topics in such advanced structures has been carried out.
The project covers all aspect of conduction in the MG/HK/III-V stacks, fresh, stressed and, finally the breakdown event and the conduction over the degraded stacks. The electrical characterization will provide relevant information to contribute to the elaboration of models that are able to predict the life time of devices more accurately.
Leading the transition to advance electronics is a challenge for applied research as it requires specific technologies platforms. That is actually why this proposal is highly interesting. This research project would contribute to achieve excellence in the filed and consequently would attract the interest of the industrial sector of the EU. This proposal aims to define advantages and constrains of advance MG/HK/III-V stacks since they will play a relevant role in the next generation of CMOS manufacture process"
EU contribution: EUR 250 106
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