Wspólnotowy Serwis Informacyjny Badan i Rozwoju - CORDIS

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SUPERTHEME

Project reference: 318458
Funded under

Circuit Stability Under Process Variability and\n Electro-Thermal-Mechanical Coupling

From 2012-10-01 to 2015-09-30

Project details

Total cost:

EUR 4 792 541

EU contribution:

EUR 3 300 000

Coordinated in:

Germany

Call for proposal:

FP7-ICT-2011-8See other projects for this call

Funding scheme:

CP - Collaborative project (generic)

Among the physical limitations which challenge progress in nanoelectronics for aggressively scaled More Moore, Beyond CMOS and advanced More-than-Moore applications, process variability and the interactions between and with electrical, thermal and mechanical effects are getting more and more critical. Effects from various sources of process variations, both systematic and stochastic, influence each other and lead to variations of the electrical, thermal and mechanical behaviour of devices, interconnects and circuits. Correlations are of key importance because they drastically affect the percentage of products which meet the specifications. Whereas the comprehensive experimental investigation of these effects is largely impossible, modelling and simulation (TCAD) offers the unique possibility to predefine process variations and trace their effects on subsequent process steps and on devices and circuits fabricated, just by changing the corresponding input data. This important requirement for and capability of simulation is among others highlighted in the International Technology Roadmap for Semiconductors ITRS. Within the SUPERTHEME project, the most important weaknesses which limit the use of current TCAD software to study the influence of both systematic and stochastic process variability and its interaction with electro-thermal-mechanical effects will be removed, and the study of correlations will be enabled. The project will efficiently combine the use of commercially available software and leading-edge background results of the consortium with the implementation of the key missing elements and links. It will bridge the current critical gap between variability simulation on process and device/interconnect level, and include the treatment of correlations. The capabilities of the software system will be demonstrated both on advanced analog circuits and on aggressively scaled transistors.

Objective

Among the physical limitations which challenge progress in nanoelectronics for aggressively scaled More Moore, Beyond CMOS and advanced More-than-Moore applications, process variability and the interactions between and with electrical, thermal and mechanical effects are getting more and more critical. Effects from various sources of process variations, both systematic and stochastic, influence each other and lead to variations of the electrical, thermal and mechanical behavior of devices, interconnects and circuits. Correlations are of key importance because they drastically affect the percentage of products which meet the specifications. Whereas the comprehensive experimental investigation of these effects is largely impossible, modelling and simulation (TCAD) offers the unique possibility to predefine process variations and trace their effects on subsequent process steps and on devices and circuits fab-ricated, just by changing the corresponding input data. This important requirement for and capability of simulation is among others highlighted in the International Technology Roadmap for Semiconductors ITRS. A project partner has also demonstrated how correlations can be simulated.\nWithin SUPERTHEME, the most important weaknesses which limit the use of current TCAD software to study the influence of both systematic and stochastic process variability and its interaction with electro-thermal-mechanical effects will be removed, and the study of correlations will be enabled. The project will efficiently combine the use of commercially available software and leading-edge background results of the consortium with the implementation of the key missing elements and links. It will bridge the current critical gap between variability simulation on process and device/interconnect level, and include the treatment of correlations. The capabilities of the software system will be demonstrated both on advanced analog circuits and on aggressively scaled transistors.

Related information

Open Access

Coordinator

FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V
Germany
Hansastrasse 27C
80686 MUNCHEN
Germany
Administrative contact: Andrea Zeumann
Tel.: +49 89 1205 2723
Fax: +49 89 1205 7534
E-mail

Participants

TECHNISCHE UNIVERSITAET WIEN
Austria
Karlsplatz
1040 WIEN
Austria
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Administrative contact: Siegfried Selberherr
Tel.: +43 1 58801 36010
Fax: +43 1 58801 36099
E-mail
AMS AG
Austria
TOBELBADERSTRASSE
8141 UNTERPREMSTAETTEN
Austria
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Administrative contact: Yasmine Pree
Tel.: +43 3136 500 31779
Fax: +43 3136 500 931779
E-mail
HQ-Dielectrics GmbH
Germany
Dornstadter Weg
89160 Dornstadt
Germany
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Administrative contact: Wilhelm Beckmann
Tel.: +49 170 9278783
Fax: +49 7348 204 928
E-mail
Excico France
France
Quai des Grésillons
92230 Gennevilliers
France
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Administrative contact: Karim Huet
Tel.: +33141112936
E-mail
ION BEAM SERVICES
France
RUE GASTON IMBERT PROLONGEE
13790 ROUSSET
France
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Administrative contact: FRANK TORREGROSA
Tel.: +33442538964
Fax: +33442538959
E-mail
ASML NETHERLANDS B.V.
Netherlands
DE RUN 6501
5504DR VELDHOVEN
Netherlands
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Administrative contact: Jo Finders
Tel.: +31 40 2684337
Fax: +31 40 268 2929
E-mail
UNIVERSITY OF GLASGOW
United Kingdom
University Avenue
G12 8QQ GLASGOW
United Kingdom
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Administrative contact: Joe Galloway
Tel.: +44 141 330 3884
E-mail
Gold Standard Simulations ltd
United Kingdom
MITCHELL STREET
G13NG Glasgow
United Kingdom
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Administrative contact: Lena Neil-Parra
Tel.: +441413304793
E-mail
Record Number: 104877 / Last updated on: 2014-09-03