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FP7 Figure 1

SNM

Project reference: 318804
Funded under

Single Nanometer Manufacturing for beyond CMOS devices

From 2013-01-01 to 2016-12-31, ongoing project

Project details

Total cost:

EUR 17 556 768

EU contribution:

EUR 12 012 000

Coordinated in:

Germany

Call for proposal:

FP7-ICT-2011-8See other projects for this call

Funding scheme:

CP - Collaborative project (generic)

The aim of the project is to investigate and develop novel Technologies for Single Nanometer Manufacturing (SNM), reaching the theoretical limit of future nanoelectronic and nanomechnanical systems.

High performance Single Nanometer Manufacturing is an enabling technology for nanoelectronics, capable to open new horizons in the emerging world of nanotechnology.  Sustainable competence and excellence in the project should secure a new path for manufacturing ultimate electronic, optical and mechanical devices never done before.  A 15 member strong team led by Prof. Ivo W. Rangelow, Head of Department of Micro- and Nanoelectronic Systems at the Ilmenau University of Technology is working together to achieve ambitious goals:

  • Pushing the limits of the nano-manufacturing down the single nanometer digit
  • Development of nano-lithographic methods for nanometer-size features, overlay placement, inspection and integration in novel nanoelectronic devices
  • Enabling of novel ultra-low power electronics, quantum devices and manipulation of individual electrons
  • Open new horizons for beyond CMOS technology by novel cost-effective, global,  nano-lithographic technologies.

The Moore’s Law has been the basis in long-term planning in the technological developments, resulting in an exponential increase in the number of transistors Si-MOSFET per chip. European Project “SNM” will contribute to next generation nano-manufacturing technologies, for building future quantum electronics and pushing this nanotechnology into many new areas. It is expected that the MOSFET can remain viable down to the 10nm scale. However, below this, difficulty in controlling the device current, and the strong influence of quantum mechanical effects such as electron tunneling, may require new devices. Furthermore, increasing difficulty in fabricating large numbers of highly nano-scale devices using conventional optical lithographic techniques greatly compounds the problem. This indicates that a different approach may be essential to create a ‘beyond‐CMOS’ generation of electronic devices. Manufacturing next generation devices in nanoelectronics, nanophotonics, and nanoelectro-mechanical systems (NEMS) requires lithography at the single‐nanometer level with high alignment accuracy between patterns, acceptable throughput, cost, and high reliability. To address this, SNM-team is working on technology using a combination of high‐resolution scanning probe lithography (SPL) and nanoimprint lithography (NIL). SNM suppose that this arrangement is a promising candidate for high‐throughput device fabrication even at the sub‐5nm scale. Scanning probes are capable of confined nanoscale interactions for imaging, probing of material properties, and lithography at the single‐nanometer scale or even smaller. SNM-team is investigating novel single‐nanometer manufacturing technologies using advanced scanning probes to pattern molecular‐glass‐based resist materials (see Figure 1). Due to the small particle size (<1nm) and truly monodisperse nature (i.e., the particles are all of similar size) of molecular resists, a more uniform and smaller lithographic pixel size can be defined in comparison with conventional resists. Our lithographic process uses the same nanoprobe for atomic force microscope (AFM) imaging to allow pattern overlay alignment, direct writing of features into molecular resists using a highly confined, development‐less resist removal process via emission of low‐energy electrons, and AFM post‐imaging for final in situ inspection.

SNM-technology offers an encouraging direction toward single‐nanometer lithography and can improve throughput significantly by employing parallel, self‐actuated, and self‐sensing probe systems. Probe‐based closed‐loop lithography can be used for sub‐5nm fabrication of nanoimprint templates, as well as reproducible nano-scale prototyping of ‘beyond CMOS’ nano-electronic devices like quantum‐dot and single electron devices.

Objective

To extend beyond existing limits in nanodevice fabrication, new and unconventional lithographic technologies are necessary to reach Single Nanometer Manufacturing (SNM) for novel 'Beyond CMOS devices'. Two approaches are considered: scanning probe lithography (SPL) and focused electron beam induced processing (FEBIP). Our project tackles this challenge by employing SPL and FEBIP with novel small molecule resist materials. The goal is to work from slow direct-write methods to high speed step-and-repeat manufacturing by Nano Imprint Lithography (NIL), developing methods for precise generation, placement, metrology and integration of functional features at 3 - 5 nm by direct write and sub-10nm into a NIL-template. The project will first produce a SPL-tool prototype and will then develop and demonstrate an integrated process flow to establish proof-of-concept 'Beyond CMOS devices' employing developments in industrial manufacturing processes (NIL, plasma etching) and new materials (Graphene, MoS2). By the end of the project: (a) SNM technology will be used to demonstrate novel room temperature single electron and quantum effect devices; (b) a SNM technology platform will be demonstrated, showing an integrated process flow, based on SPL prototype tools, electron beam induced processing, and finally pattern transfer at industrial partner sites. An interdisciplinary team (7 Industry and 8 Research/University partners) from experienced scientists will be established to cover specific fields of expertise: chemical synthesis, scanning probe lithography, FEBIP-Litho, sub-3nm design and device fabrication, single nanometer etching, and Step-and-Repeat NIL- and novel alignment system design. The project coordinator is a University with great experience in nanostructuring and European project management where the executive board includes European industry leaders such as IBM, IMEC, EVG, and Oxford Instruments.

Related information

Coordinator

TECHNISCHE UNIVERSITAET ILMENAU
Germany

EU contribution: EUR 2 115 302


EHRENBERGSTRASSE 29
98693 ILMENAU
Germany
Administrative contact: Thomas MIROW
Tel.: +49 3677 69 2555
Fax: +49 3677 69 5009
E-mail

Participants

EV GROUP E. THALLNER GMBH
Austria

EU contribution: EUR 517 125


DI ERICH THALLNER STRASSE 1
4782 ST FLORIAN AM INN
Austria
Administrative contact: Jakob Harming
Tel.: +43 7712 5311 0
E-mail
INTERUNIVERSITAIR MICRO-ELECTRONICACENTRUM IMEC VZW
Belgium

EU contribution: EUR 1 419 313


KAPELDREEF 75
3001 LEUVEN
Belgium
Administrative contact: Christine Van Houtven
Tel.: +3216281613
E-mail
MICROSYSTEMS LTD
Bulgaria

EU contribution: EUR 403 240


kv. CHAIKA 15-D-21
9010 Varna
Bulgaria
Administrative contact: Nikolay Nikolov
Tel.: +359 52 321998
Fax: +359 52 302534
E-mail
SWISSLITHO AG
Switzerland

EU contribution: EUR 853 402


TECHNOPARKSTRASSE 1
8005 ZURICH
Switzerland
Administrative contact: Felix Holzner
Tel.: +41 77 434 7363
E-mail
IBM RESEARCH GMBH
Switzerland

EU contribution: EUR 1 308 930


SAEUMERSTRASSE 4
8803 RUESCHLIKON
Switzerland
Administrative contact: Catherine Trachsel
Tel.: +41 44 724 8289
E-mail
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland

EU contribution: EUR 694 800


BATIMENT CE 3316 STATION 1
1015 LAUSANNE
Switzerland
Administrative contact: Kis Andras
Tel.: +41216933925
E-mail
UNIVERSITAET BAYREUTH
Germany

EU contribution: EUR 610 560


UNIVERSITATSSTRASSE 30
95447 BAYREUTH
Germany
Administrative contact: Marcus Urban
Tel.: +49 921 55 5351
Fax: +49 921 55 845351
E-mail
AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Spain

EU contribution: EUR 1 033 797


CALLE SERRANO 117
28006 MADRID
Spain
Administrative contact: Alberto Sereno Alvarez
Tel.: +34 91 566 8852
Fax: +34 91 566 89 13
E-mail
TECHNISCHE UNIVERSITEIT DELFT
Netherlands

EU contribution: EUR 905 525


STEVINWEG 1
2628 CN DELFT
Netherlands
Administrative contact: Kees Hagen
Tel.: +31 15 2786073
Fax: +31 15 278 4301
E-mail
VSL B.V.
Netherlands

EU contribution: EUR 345 856


THIJSSEWEG 11
2629 JA DELFT
Netherlands
Administrative contact: Marijn van Veghel
Tel.: +31 152691517
Fax: +31 152612971
E-mail
IMPERIAL COLLEGE OF SCIENCE TECHNOLOGY AND MEDICINE
United Kingdom

EU contribution: EUR 569 110


SOUTH KENSINGTON CAMPUS EXHIBITION ROAD
SW7 2AZ LONDON
United Kingdom
Administrative contact: Shaun Power
Tel.: +44 207 594 8773
Fax: +44 207 594 8609
E-mail
OXFORD SCIENTIFIC CONSULTANTS LTD
United Kingdom

EU contribution: EUR 298 800


ST PETERS ROAD 8A
OX14 3SJ ABINGDON
United Kingdom
Administrative contact: Philip Prewett
Tel.: +44 1235 200689
E-mail
THE OPEN UNIVERSITY
United Kingdom

EU contribution: EUR 461 040


WALTON HALL
MK7 6AA MILTON KEYNES
United Kingdom
Administrative contact: David Barfield
Tel.: +441908655064
Fax: +441908652990
E-mail
OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
United Kingdom

EU contribution: EUR 417 960


TUBNEY WOODS
OX13 5QX ABINGDON
United Kingdom
Administrative contact: Andy Roylance
Tel.: +441934837000
Fax: +441934837001
E-mail
THE UNIVERSITY OF LIVERPOOL
United Kingdom

EU contribution: EUR 57 240


BROWNLOW HILL 765 FOUNDATION BUILDING
L69 7ZX LIVERPOOL
United Kingdom
Administrative contact: Cherie Judge
Tel.: +441517948260
Fax: +441517948744
E-mail
Record Number: 104931 / Last updated on: 2016-04-01