Project description
Very advanced nanoelectronic components: design, engineering, technology and manufacturability
Exploiting the potential of engineered Chalcogenide Super Lattices to achieve a breakthrough in power dissipation and switching speed of PC Memories, toward the realization of a "universal memory".
Charge storage has been the main physical mechanism supporting all solid state mass storage memories until now, both DRAM and FLASH. However none of the two main memory types appear to fully satisfy system requirements, DRAM because of its volatility and large power dissipation, and FLASH because of its slow programming speed and large block organization. PCM technology is a promising candidate to target the "universal memory" matching most of the properties of FLASH and DRAM. However, to realize the full potential of PCM two crucial memory characteristics have to be improved: programming current and switching speed.The new memory concept investigated in the project is based on engineered Chalcogenide SuperLattices (CSL) that should allow realizing the memory switching with a modification in the bonding nature instead of the energy expensive melting process, bringing about a significant reduction of both transition times and programming currents. Despite the convincing experimental evidence the physical mechanism is not yet understood.The project aims at exploiting the potential of CSL-PCM memory cells, starting from an atomistic understanding of switching in CSL materials through experiments and physical model development, leading to new insights for CSL engineering. Optimization of the CSL device will be achieved through the development of a test vehicle allowing the benchmark among different stacks, based on "universal memory" electrical performance targets. A large array, realized at 2X technology node, will be fabricated and integration issues will be addressed. Scalability to the 1X node will be also evaluated to demonstrate the capability to become a real "universal memory" also for the next generations of memory chips.At the end of the project a first "universal memory" chip at the state of the art technology node will be available with an expected direct impact on the solid state memory market.
Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Topic(s)
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Call for proposal
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
FP7-ICT-2011-8
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Funding Scheme
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Coordinator
20864 AGRATE BRIANZA
Italy
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.