Forschungs- & Entwicklungsinformationsdienst der Gemeinschaft - CORDIS

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GRADE

Project reference: 317839
Funded under

Graphene-based Devices and Circuits for RF Applications

From 2012-10-01 to 2016-03-31, closed project

Project details

Total cost:

EUR 5 156 629

EU contribution:

EUR 3 650 992

Coordinated in:

Germany

Call for proposal:

FP7-ICT-2011-8See other projects for this call

Funding scheme:

CP - Collaborative project (generic)

Demonstration of the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies

GRADE is a project focusing on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. These are Graphene field effect transistors (GFET), that use graphene as a high-mobility transistor channel and the alternative "graphene base transistors" (GBT), that are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfil this requirement. This project enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing. The GRADE consortium consists of four academic partners, of which two have a strong experimental background and excellent processing facilities and one is focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design; one research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing; and one global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.\\n

 

Objective

GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. Graphene field effect transistors (GFET) use graphene as a high-mobility transistor channel. Alternative "graphene base transistors" (GBT) are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfill this requirement. The proposed research enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing.To achieve these goals, GRADE unites a powerful consortium:Four academic partners, two of them with a strong experimental background and excellent processing facilities, one focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design.One research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing.One global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.

Related information

Documents and Publications

Open Access

Coordinator

UNIVERSITAET SIEGEN
Germany

EU contribution: EUR 378 220


HERRENGARTEN 3
57072 SIEGEN
Germany
Administrative contact: Sascha Fiedler
Tel.: +49 271 740 4828
Fax: +49 271 740 14828
E-mail

Participants

INFINEON TECHNOLOGIES AG
Germany

EU contribution: EUR 581 272


AM CAMPEON 1-12
85579 NEUBIBERG
Germany
Administrative contact: Susann Alexa
Tel.: +4989234 20114
E-mail
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Germany

EU contribution: EUR 717 292


IM TECHNOLOGIEPARK 25
15236 FRANKFURT (ODER)
Germany
Administrative contact: Uwe George
Tel.: +493355625332
Fax: +493355625333
E-mail
UNIVERSITE DE BORDEAUX
France

EU contribution: EUR 0


PLACE PEY BERLAND 35
33000 BORDEAUX
France
Administrative contact: Georges Hadziioannou
Tel.: +33 5 40002746
E-mail
UNIVERSITE BORDEAUX I
Participation ended
France

EU contribution: EUR 255 454


351 Cours de la Liberation
33405 TALENCE
France
Administrative contact: Stéphanie Clement
Tel.: +33 5 40 00 36 26
Fax: +33 5 56 37 15 45
E-mail
UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I
France

EU contribution: EUR 408 002


CITE SCIENTIFIQUE
59655 VILLENEUVE D'ASCQ
France
Administrative contact: Muriel VERNAY
Tel.: +33 3 20 43 65 13
Fax: +33 3 20 33 61 95
E-mail
CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Italy

EU contribution: EUR 6 000


VIA TOFFANO 2
40125 BOLOGNA
Italy
Administrative contact: Baccarani Giorgio
Tel.: +39 051 209 5412
Fax: +39 051 209 5410
E-mail
KUNGLIGA TEKNISKA HOEGSKOLAN
Sweden

EU contribution: EUR 392 000


BRINELLVAGEN 8
100 44 STOCKHOLM
Sweden
Administrative contact: Simon Demir
Tel.: +46 8 7904235
Fax: +46 8 245435
E-mail
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France

EU contribution: EUR 112 968


Rue Michel -Ange 3
75794 PARIS
France
Administrative contact: Stéphanie Clement
Tel.: +33 5 40 00 36 26
Fax: +33 5 56 37 15 45
E-mail
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France

EU contribution: EUR 202 184


Rue Michel -Ange 3
75794 PARIS
France
Administrative contact: Gilles Pulvermuller
Tel.: +33 3 20 12 58 15
Fax: +33 3 20 63 00 43
E-mail
Institut polytechnique de Bordeaux
France

EU contribution: EUR 0


AV DU DOCTEUR ALBERT SCHWEITZER 1
33402 TALENCE
France
Administrative contact: Stephanie Clement
Tel.: +33 5 40 00 36 26
Fax: +33 5 56 37 15 45
E-mail
ALMA MATER STUDIORUM - UNIVERSITA DI BOLOGNA
Italy

EU contribution: EUR 199 200


VIA ZAMBONI 33
40126 BOLOGNA
Italy
Administrative contact: Claudio Fiegna
Tel.: +390512095401
Fax: +390512095410
E-mail
UNIVERSITA DEGLI STUDI DI UDINE
Italy

EU contribution: EUR 199 200


VIA PALLADIO 8
33100 UDINE
Italy
Administrative contact: Roberto RINALDO
Tel.: +39 0432 558252
Fax: +39 4032 558251
E-mail
UNIVERSITA DI PISA
Italy

EU contribution: EUR 199 200


LUNGARNO PACINOTTI 43/44
56126 PISA
Italy
Administrative contact: Giovanna Carcea
Tel.: +39 050 2211214
E-mail
Record Number: 105140 / Last updated on: 2016-04-11