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InP DHBT MMIC Technology for Millimeter-Wave Power Applications

Objetivo

"With the advent of smart phones, tablets and connected cameras, mobile data traffic is growing at a very fast pace. The capacity of mobile backhaul network must be increased to deal with this data explosion. In that respect there is at present an increased interest in exploiting the millimeter-wave frequency range (30-300 GHz) for wireless backhauling. The progress in semiconductor device technology, in particular compound semiconductor transistors such as High Electron Mobility Transistor (HEMT) and Heterojunction Bipolar Transistor (HBT) devices enables the development of wireless communication circuits operating at frequencies well above 100 GHz. The main bottleneck in these mm-wave wireless communication systems today is the power amplifier (PA) which sets the limit on the available transmission range. The overall objective of the ""IN-POWER"" project will be to develop an InP HBT technology optimized for millimeter-wave power applications. The development of the InP DHBT technology will be accompanied by the MMIC (Monolitic Microwave Integrated Circuits) implementation of PA's targeting emerging applications at E-band (71-76 and 81-86 GHz) and higher millimeter-wave frequencies."

Convocatoria de propuestas

FP7-PEOPLE-2013-ITN
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Coordinador

DANMARKS TEKNISKE UNIVERSITET
Aportación de la UE
€ 580 268,92
Dirección
ANKER ENGELUNDS VEJ 101
2800 Kongens Lyngby
Dinamarca

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Región
Danmark Hovedstaden Københavns omegn
Tipo de actividad
Higher or Secondary Education Establishments
Contacto administrativo
Tom Johansen (Dr.)
Enlaces
Coste total
Sin datos

Participantes (1)