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Contenido archivado el 2024-04-15

DEVELOPMENT OF THE SCIENTIFIC AND TECHNICAL BASIS FOR INTEGRATED AMORPHOUS SILICON MODULES (JOINT PROPOSAL BY MBB, SOLEMS, IMEC AND ASSOCIATED RESEARCH LABORATORIES)

Objetivo

THE R&D EFFORTS AT S.C.K./C.E.N. ARE MAINLY CONCENTRATED ON FOUR TOPICS WHICH, WE BELIEVE, ARE DECISIVE FOR IMPROVING THE EFFICIENCY AND THE STABILITY OF AMORPHOUS SILICON SINGLE JUNCTION GLASS-TCO-P-I-N-METAL SOLAR CELLS.

THE MAIN EFFORT WAS DEVOTED TO THE OPTIMIZATION OF INDIVIDUAL LAYERS AND SOLAR CELLS GROWN IN THE NEW MULTICHAMBER PECVD SYSTEM. AT THE PRESENT STATE OF OPTIMIZATION, WE OBTAIN A DENSITY OF STATES AT THE FERMI LEVEL BELOW 10 16 EV TO THE POWER OF -1CM-3 FOR THE INTRINSIC LAYER. HOMOJUNCTION P-I-N SOLAR CELLS HAVE AN EFFICIENCY OF ABOUT 5 % (AREA = 0.1 CM2).
WE CONTINUED THE DEVELOPMENT OF HETEROJUNCTION SOLAR CELLS IN OUR SINGLE CHAMBER SYSTEMS. FOR LARGE AREA SOLAR CELLS (AREA = 100 CM2), INTEGRATED USING A LOW COST MECHANICAL PATTERNING TECHNIQUE, WE OBTAINED EFFICIENCIES OF 5 %. WE STARTED THE STUDY OF CELL DEGRADATION UNDER PROLONGED ILLUMINATION. ANALYSIS OF THE PERFORMANCE DECAY OF THE CELLS LEADS TO THE CONCLUSION THAT AT LEAST TWO MECHANISMS ARE OPERATIVE. TEMPERATURE STUDIES SUGGEST THAT CELL STABILITY CAN BE GREATLY INCREASED BY RAISING THE CELL OPERATING TEMPERATURE.
WE STARTED THE STUDY OF THE SNO2/A-SI:H INTERFACE USING SIMS. WE CLEARLY SHOWED THE STUDY OF THE SURFACE ROGHNUGHNESS OF THE SNO2 LAYER ON THE INTERFACE WIDTH OF THE P+ A-SIC:H/SNO2 INTERFACE. IN THE NEAR FUTURE, WE WILL INVESTIGATE THE EFFECT OF THE INSERTION OF DIFFUSION BARRIERS ON THE DEGRADATION OF THE INTERFACE. FOR THAT PURPOSE, WE ALREADY OPTIMIZED THE DEPOSITION OF INSULATING ZNO BY RF DIODE SPUTTERING. AT PRESENT, WE ARE PERFORMING SIMS MEASUREMENTS ON P/I INTERFACES GROWN IN A SINGLE AND MULTICHAMBER SYSTEM IN ORDER TO STUDY THE CROSS-CONTAMINATION WITH BORON. THE DEVELOPMENT OF N-TYPE MICROCRYSTALLINE SILICON WAS STARTED. THE DEPOSITION CONDITIONS TO PRODUCE N+MU MATERIAL WERE DETERMINED BY VARYING THE SIH4/H2 RATION AND THE RF POWER.

Tema(s)

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Convocatoria de propuestas

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Régimen de financiación

CSC - Cost-sharing contracts

Coordinador

BELGIAN NUCLEAR RESEARCH CENTRE
Aportación de la UE
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Dirección
200,Herrmann Debrouxlaan 40-42
1160 BRUXELLES
Bélgica

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