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Low Cost Opto-electronic Components

Objectif

The project objective is the development of manufacturing technologies and device designs compatible with the production of large volumes of low cost active opto- electronic components in line with the IBC network requirements.
The project objective is the development of manufacturing technologies and device designs compatible with the production of large volumes of low cost active optoelectronic components in line with the integrated broadband communications (IBC) network requirements.
The main achievements in chip technology are the improvement of high temperature performance of 1300 nm all metal organic vapour phase epitaxy (MOVPE) buried heterostructure (BH) laser chips (5 mW up to 100 C), the fabrication of 1550 nm multiple quantum well (MQW) lasers grown by MOVPE on 2 wafers; and the realisation of first 1550 nm MQW distributed feedback (DFB) lasers with both mirrors dry etched and a monlithically integrated monitor photodiode. Threshold currents have been reduced down to 14 mA (25 C), which is similar to those of cleaved devices. These devices are suitable for on wafer testing using a procedure which provides exact values of the lasing threshold and information about the single mode behaviour.
Experimental work has confirmed that due to their higher index of refraction, silicon lenses gave better coupling efficiency when compared to glass lenses, with a simultaneous improvement of coupling tolerances. Production costs for discrete silicon lenses are already similar to those for glass, but large economies of scale are expected from the fabrication of thousands of silicon lenses/lensholders users etching techniques on wafers.
In the field of optoelectronics modules, prototypes of transmitters have been made. A complete reciever module for the synchronous optical network standard (SONET) bit rate of 622 Mbits{-1} has been built with sensitivity exceeding project targets. The great potential of high precision plastic moulding has been demonstrated with optical duplexes for transceiver modules. Achieved launched powers have been increased, with a simultaneous reduction of stray light to the receiving photodiode. Special evaluation and test programmes have been performed to improve the stability and reliability of lasers. A new failure rate of 200 failures in thousands (FIT) was derived for the standard temperature range of 20 C to +75 C.
The next generation of components have been addressed by a DFB laser package with an optical isolator and driver integrated circuit (IC) for 2.5 Gbits{-1}. Using DFB laser chips packages with a shielded metal arc (SMA) feedthrough have been built and delivered where they are successfully operating in 10 Gbits{-1} systems.
Technical Approach

Market forecast: IBC requirements will be assessed and used as project targets. Technical progress both within the project and world-wide will be evaluated against these targets.

Chip technology: chip designs and special processes will be developed to enable the performance criteria to be met. For hybrid opto-electronic modules, circuits will be designed to enable interfacing between the system and opto-electronics to be eased.

Low cost packaging: the project will attempt to define standard package outlines to allow interchangeability. A specific emphasis will be placed on fibre lensing and fixing. Low cost packages will also be developed for very high speed devices, where both analogue (up to 7 GHz) and digital (up to 10 Gbit/s) requirements will be considered.

Component evaluation and test: essential ratings and characteristics will be defined to enable automated, low cost measurement methods to be developed. Devices will be evaluated for reliability and failures assessed.

Key Issues

- The achievement of opto-electronic components at a cost permitting economic use CACs and CPNs.
- The achievement of high mechanical precision and stability at low cost; automation requirements for manufacture and testing; packaging aspects.

Achievements

The main achievements in chip technology are the improvement of high temperature performance of 1300 nm all MOVPE BH laser chips (5 mW up to 100 C), the fabrication of 1550 nm multiple quantum well (MQW) lasers grown by MOVPE on two wafers; and the realisation of first 1550 nm MQW DFB lasers with both mirrors dry etched and a monlithically integrated monitor photodiode. Threshold currents have been reduced down to 14 mA (25 Celsiusdegrees), which is similar to those of cleaved devices. These devices are suitable for on-wafer testing using a procedure which provides exact values of the lasing threshold and information about the single mode behaviour.

After the realisation of receptacle laser packages with angled fibre ferrules, a feasibility sample using the 'EC' connector of project R1089 has now been made. This connector shows potential for a further cost reduction of connectorised laser packages. Experimental work has confirmed that due to their higher index of refraction, silicon lenses gave better coupling efficiency when compared to glass lenses, with a simultaneous improvement of coupling tolerances. Production costs for discrete silicon lenses are already similar to those for glass, but large economies of scale are expected from the fabrication of thousands of silicon lenses / lensholders using etching techniques on wafers.

In the field of opto-electronic modules, prototypes of transmitters have been made which fulfil the CCITT G.957 standard. A complete receiver module for the SONET bitrate of 622 Mbit/s has been built with sensitivity exceeding project targets. The great potential of high precision plastic moulding has been demonstrated with optical duplexers for transceiver modules. Achieved launched powers have been increased, with a simultaneous reduction of stray light to the receiving photodiode. Special evaluation and test programmes have been performed to improve the stability and reliability of lasers. A new failure rate of 200 FITs was derived for the standard temperature range of -20 Celsiusdegrees to +75 Celsiusdegrees.

The next generation of components have been addressed by a DFB laser package with an optical isolator and driver IC for 2.5 Gbit/s. Using DFB laser chips supplied by project R1057, packages with a SMA feed-through have been built and delivered to project R1051, where they are successfully operating in 10 Gbit/s systems. The work so far has led to six publications and one contribution to standardisation organisations.

Expected Impact

The achievement of the goals of this project is vital to the penetration of broadband to the customer premises (domestic and business). Early implementation of IBC is dependent on the having the right components at the right price and at the right time and in this respect the project is of prime importance.

Champ scientifique

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Coordinateur

ALCATEL SEL AG
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Adresse
LORENZSTRASSE 10
70435 STUTTGART
Allemagne

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Dernière mise à jour: 26 Octobre 1992

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Permalink: https://cordis.europa.eu/project/id/R1031/fr

European Union, 2024