LONGESSTProject ID: 607153
Low Cost Germanium Substrates for Next Generation 4-Junction Space Solar Cells Utilising Dilute Nitride Technology
Multi-junction solar cell technology, based on III-V semiconductor structures grown onto Germanium substrates, is well established as the primary photovoltaic technology used in satellite power generation. As future satellite power requirements will significantly increase due to the adoption of technologies such as electrical propulsion, sensing and telecommunications, next generation space solar cells will be required to significantly increase their conversion efficiency to enable higher energy generation with minimal increase in overall system weight and cost. To this end, this proposal will develop multi-junction space solar cells on high quality, low cost, large area (150mm diameter) Germanium substrates, which will have conversion efficiencies >33% (AM0), utilising novel 4-Junction architectures. The process will adopt dilute nitride epitaxial technology that has been developed by Nanyang Technological University (1). To enable this, a powerful consortium has been assembled, which covers the entire skill set required to produce such cells, including substrate manufacture, advanced epitaxy, device design, device fabrication, test and qualification.
(1). Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell, K.H. Tan, S. Wicaksono, W.K. Loke, D. Li, S.F. Yoon, E.A. Fitzgerald, S.A. Ringel, J.S. Harris Jr, Journal of Crystal Growth 335, pp66-69, 2011.
EU contribution: EUR 658 602
PASCAL CLOSE ST MELLONS
CF3 0EG Cardiff
EU contribution: EUR 825 841
CALLE RAMIRO DE MAEZTU 7 EDIFICIO RECTORADO
EU contribution: EUR 580 954
RUE DU MARAIS 31
EU contribution: EUR 432 969
Block 6, West of Scotland Science Park, Maryhill Road
G20 0SP Glasgow