OSIRISProject ID: 662322
Financé au titre de:
Optimal SIC substR ates for Integrated Microwave and Power CircuitS
Détails concernant le projet
Coût total:EUR 4 487 117,50
Contribution de l'UE:EUR 1 819 212
Appel à propositions:ECSEL-2014-1See other projects for this call
Régime de financement:ECSEL-RIA - ECSEL Research and Innovation Action
OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project proposes to elaborate innovative SiC material using isotopic sources. This material will offer thermal conductivity improvement of 30% which is important for devices dissipating a lot of power, in particular in SiC power electronics and in microwave device using GaN high electron mobility transistors (HEMT) grown on SiC semi-insulating substrates. OSIRIS project will allow reinforcing GaN technology penetration into the market by cost effectiveness of the SiC substrates and circuit performances improvement thanks to better heat spreading close to the dissipative area.
For microwave GaN/SiC HEMT this isotopic approach could create a complete shift in the currently used substrate / GaN epi-wafer technology; it intends to grow high thermal conductivity (+30%) semi-insulating SiC on top of low cost semiconducting SiC substrates (widely used by the power electronics and LED industries). Reduced layer thickness is necessary as only the top 50 to 100µm SiC wafer is really useful as the substrate itself is currently thinned to realise microstrip waveguided microwave circuits.
For power electronics, this isotopic innovation will be essentially focused on thermal improvement, i.e. better electron mobility at a given power dissipation as mobility and drift mobility decrease with temperature and also better carrier transport thanks to lower scattering rates. Schottky and p-i-n diodes will be tested using this material, which however will have to be doped while microwave devices need semi-insulating materials.
The improved thermal SiC properties will be obtained by using single isotopic atoms for silicon and carbon, namely 28Si and 12C. The SiC wafer size will be targeted to 100mm (4-inches) which is today widely used on industry.
Contribution de l'UE: EUR 637 884
1 AVENUE AUGUSTIN FRESNEL CAMPUS POLYTECHNIQUE
91767 PALAISEAU CEDEX
Contribution de l'UE: EUR 73 042
3 Avenue Didier Daurat
Contribution de l'UE: EUR 46 591
AV DU QUEBEC BATIMENT CHARMILLE PARC SILIC DE VILLEBON COURTABOEUF 10
91140 VILLEBON SUR YVETTE
Contribution de l'UE: EUR 164 396
RUE MICHEL ANGE 3
Contribution de l'UE: EUR 153 500
4622 KRISTIANSAND S
Contribution de l'UE: EUR 110 517
Contribution de l'UE: EUR 316 161
581 83 LINKOPING
Contribution de l'UE: EUR 169 919
PO BOX 734
601 16 NORKOPING
Contribution de l'UE: EUR 147 202
ISAFJORDSGATAN 22 ELECTRUM 207
164 40 KISTA