Objectif The aim of the work proposed here is to develop a completely new method to electronically dope assemblies of semiconductor nanocrystals (a.k.a quantum dots, QDs), and porous semiconductors in general. External dopants are added on demand in the form of electrolyte ions in the voids between QDs. These ions will be introduced via electrochemical charge injection, and will subsequently be immobilized by (1) freezing the electrolyte solvent at room temperature or (2) chemically linking the ions to ligands on the QD surface, or by a combination of both. Encapsulating doped QD films using atomic layer deposition will provide further stability. This will result in stable doped nanocrystal assemblies with a constant Fermi level that is controlled by the potential set during electrochemical charging. QDs are small semiconductor crystals with size-tunable electronic properties that are considered promising materials for a range of opto-electronic applications. Electronic doping of QDs remains a big challenge even after two decades of research into this area. At the same time it is highly desired to dope QDs in a controlled way for applications such as LEDs, FETs and solar cells. This research project will provide unprecedented control over the doping level in QD films and will provided a major step in the optimization of optoelectronic devices based on QDs. The “Doping-on-Demand” approach will be exploited to develop degenerately doped, low-threshold QD lasers that can be operated under continuous wave excitation, and QD laser diodes that use electrical injection of charge carriers. The precise control of the Fermi-level will further be used to optimize pin junction QD solar cells and to develop, for the first time, QD pn junction solar cells with precise control over the Fermi levels. Champ scientifique engineering and technologyenvironmental engineeringenergy and fuelsrenewable energyengineering and technologynanotechnologynano-materialsnanocrystalsengineering and technologymaterials engineeringcoating and filmsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesphysical sciencesopticslaser physics Programme(s) H2020-EU.1.1. - EXCELLENT SCIENCE - European Research Council (ERC) Main Programme Thème(s) ERC-StG-2015 - ERC Starting Grant Appel à propositions ERC-2015-STG Voir d’autres projets de cet appel Régime de financement ERC-STG - Starting Grant Institution d’accueil TECHNISCHE UNIVERSITEIT DELFT Contribution nette de l'UE € 1 497 842,00 Adresse STEVINWEG 1 2628 CN Delft Pays-Bas Voir sur la carte Région West-Nederland Zuid-Holland Delft en Westland Type d’activité Higher or Secondary Education Establishments Liens Contacter l’organisation Opens in new window Site web Opens in new window Participation aux programmes de R&I de l'UE Opens in new window Réseau de collaboration HORIZON Opens in new window Coût total € 1 497 842,00 Bénéficiaires (1) Trier par ordre alphabétique Trier par contribution nette de l'UE Tout développer Tout réduire TECHNISCHE UNIVERSITEIT DELFT Pays-Bas Contribution nette de l'UE € 1 497 842,00 Adresse STEVINWEG 1 2628 CN Delft Voir sur la carte Région West-Nederland Zuid-Holland Delft en Westland Type d’activité Higher or Secondary Education Establishments Liens Contacter l’organisation Opens in new window Site web Opens in new window Participation aux programmes de R&I de l'UE Opens in new window Réseau de collaboration HORIZON Opens in new window Coût total € 1 497 842,00