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DEVELOPMENT OF ADVANCED GAN TECHNOLOGIES

Cel

According to the High-Level Experts Group (HLG) micro and nanoelectronics are essential for all goods and services which need intelligent control in all innovative sectors and are therefore identified as Key Enabling Technologies (KET). Gallium Nitride is an advanced semiconductor material at the heart of three strategic issues, advanced materials, photonics and micro/nanoelectronics. The deployment of these technologies is key for Europe to strengthen its manufacturing capacities while addressing societal challenges on energy and transportation.
The main goal of the AGATE project is to implement an industrial European source of engineered substrates and epitaxial structures for GaN electronic devices, and to validate the substrate performances on high performance GaN devices.

Zaproszenie do składania wniosków

ENIAC-2012-2
Zobacz inne projekty w ramach tego zaproszenia

Koordynator

SOITEC SA
Wkład UE
€ 5 602 480,00
Adres
PARC TEC NO DES FONTAINES CHEMIN DE FRANQUES
38190 Bernin
Francja

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Region
Auvergne-Rhône-Alpes Rhône-Alpes Isère
Rodzaj działalności
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Kontakt administracyjny
Linki
Koszt całkowity
Brak danych

Uczestnicy (9)