Obiettivo Nanogap electrodes have been a highly attractive research area for over 25 years. This is mainly due to their potential for realising next generation nanodevices and circuit elements with lower power consumption, faster speed, and higher level of integration, as well as investigating the fundamental properties of materials at the nano- or even molecular level. However, the lack of a facile, inexpensive, high throughput technique for the manufacturing of dissimilar nanogap electrodes has hindered their commercial and scientific exploitation.It is exactly at this junction that I strive to make significant advances with this proposal, by first implementing a novel patterning technique, adhesion lithography (a-Lith), to manufacture large aspect ratio (>100,000) metal electrode nanogaps (<50 nm) on a variety of substrates and then by fabricating and fully characterising nanoscale devices that will allow both understanding of the relevant device physics, alongside, advancing in device performance. Herein, I will firstly further develop the a-Lith key processing steps in order to establish a reliable protocol for the controlled geometry and uniform nanogap formation. Then I will follow a multidisciplinary research trajectory aiming at the development of high performance co-planar nano-scale electronic devices. Targeted proof-of-concept applications include radio frequency rectifying Schottky diodes, non-volatile ferroelectric tunnel junction memories, light-emitting diodes (LEDs), photodetectors, piezoelectric nanogenerators and molecular nano-junctions, the architectures and dimensions of which would be difficult or far too expensive to obtain with traditional patterning techniques (e.g. e-beam lithography). Finally, during my secondment, I will pursue the successful demonstration of fully functional non-volatile ferroelectric tunnel memory array over large area flexible substrates that will pave the way to the industrial deployment of this highly promising technology. Campo scientifico engineering and technologyelectrical engineering, electronic engineering, information engineeringinformation engineeringtelecommunicationsradio technologyradio frequencyengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensorssocial scienceseconomics and businessbusiness and managemententrepreneurshipengineering and technologymaterials engineeringcoating and filmsengineering and technologynanotechnologynano-materials Programma(i) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Argomento(i) MSCA-IF-2015-EF - Marie Skłodowska-Curie Individual Fellowships (IF-EF) Invito a presentare proposte H2020-MSCA-IF-2015 Vedi altri progetti per questo bando Meccanismo di finanziamento MSCA-IF-EF-ST - Standard EF Coordinatore IMPERIAL COLLEGE OF SCIENCE TECHNOLOGY AND MEDICINE Contribution nette de l'UE € 183 454,80 Indirizzo SOUTH KENSINGTON CAMPUS EXHIBITION ROAD SW7 2AZ LONDON Regno Unito Mostra sulla mappa Regione London Inner London — West Westminster Tipo di attività Higher or Secondary Education Establishments Collegamenti Contatta l’organizzazione Opens in new window Sito web Opens in new window Partecipazione a programmi di R&I dell'UE Opens in new window Rete di collaborazione HORIZON Opens in new window Costo totale € 183 454,80
