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Valley and spin devices based on two-dimensional semiconductors

Objective

The main objective of this research proposal is to realize new types of electronic devices based on the valley/spin degree of freedom in two-dimensional semiconductors from the transition metal dichalcogenide family. These materials are analogous to graphene but have a direct band gap. Together with the unique band structure, this allows manipulating the spin and valley degrees of freedom interchangeably. In addition, it can give rise to a mechanism for protecting the spin which could in future result in very high spin relaxation lengths. This proposal will explore various spin/valley injection mechanisms as well as detection mechanisms with the goal of realizing an all-electric valleytronic device with no need of optical excitation which is bulky and difficult to scale and implement on chip scale. Various new device architectures such as valley interconnects, amplifiers and diodes will be realized in the central part of the proposal.

Fields of science (EuroSciVoc)

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Programme(s)

Multi-annual funding programmes that define the EU’s priorities for research and innovation.

Topic(s)

Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.

Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

ERC-COG - Consolidator Grant

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) ERC-2015-CoG

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Host institution

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 1 998 060,00
Address
BATIMENT CE 3316 STATION 1
1015 LAUSANNE
Switzerland

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Region
Schweiz/Suisse/Svizzera Région lémanique Vaud
Activity type
Higher or Secondary Education Establishments
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 1 998 060,00

Beneficiaries (1)

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