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Enabling flexible integrated circuits and applications

Objective

Thin-film transistor technologies are present in many products today that require an active transistor backplane e.g. flat-panel displays and flat-panel photodetector arrays. Unipolar n-type transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) as semiconductor is currently the most promising technology for next generation products demanding a high-performant, low power transistor, manufacturable on flexible substrates enabling curved, bendable and even rollable displays. a-IGZO is a wide bandgap material characterized by extremely low off-state leakage currents and electron mobility of ~20 cm2/Vs. IGZO transistors fabricated on flexible substrates will also find their use in applications that require flexible integrated circuits.

The goal of this FLICs proposal is to develop disruptive technology and ground-breaking design innovations with amorphous oxide TFTs on plastic substrates, targeting large scale or very large scale flexible integrated circuits with unprecedented characteristics in terms of power consumption, supply voltage and operating speed, for applications in IoT and wearable healthcare sensor patches.

We introduce a new logic style, “quasi-CMOS”, which is based on unipolar, oxide dual-gate thin-film transistors. This logic style will drastically decrease the power consumption of unipolar logic gates in a novel way by taking advantage of dynamic backgate driving and of the transistor’s unique low off-state leakage current, without compromising on switching speed. In addition, we also introduce downscaling of the transistor’s dimensions, while remaining compatible with upscaling to large-area manufacturing platforms. Finally, we will investigate novel ultralow-power design techniques on system-level, while exploiting the quasi-CMOS logic gates.

We will demonstrate the power of this innovation with circuits for item-level Internet-of-Things, UHF RFID, and wearable health sensor patches.

Fields of science (EuroSciVoc)

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Programme(s)

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Topic(s)

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Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

ERC-STG - Starting Grant

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) ERC-2016-STG

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Host institution

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 1 499 155,00
Address
KAPELDREEF 75
3001 Leuven
Belgium

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Region
Vlaams Gewest Prov. Vlaams-Brabant Arr. Leuven
Activity type
Research Organisations
Links
Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 1 499 155,00

Beneficiaries (1)

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