Objectif Semiconductor sensors for boron neutron capture therapy. The Department of Radiation Physics at the Institute for Nuclear Research has good experience in semiconductor-based detectors for neutron measurements. The principle is based on the creation of radiaton defects in semiconductors under the influence of fast neutrons, which change the electrical properties of the semiconductor. As the threshold energy for creation of radiation defects in silicon is 13 eV, one can produce semiconductor dosimeters for neutron dose measurements with application in cancer therapy. In this project, it is proposed to carry out the following research: 1. The construction and testing of various types of integral semiconductor dosimeters for regitration of neutron doses with the energy 1 eV to 8 keV. 2. The construction and testing of detectors with different converters for defining the neutron flux density as a function of neutron energy. 3. The test of semiconductor sensors for medical purposes, especially for on-line monitoring. Programme(s) IC-PECO/COPERNICUS - Scientific and technological cooperation between the European Community and European non-member countries, 1992- Thème(s) 0201 - CEEC participation in BIOMEDICAL AND HEALTH RESEARCH programme Appel à propositions Data not available Régime de financement CSC - Cost-sharing contracts Coordinateur UNIVERSITAET BREMEN Contribution de l’UE Aucune donnée Adresse Leobener strasse 28334 Bremen Allemagne Voir sur la carte Coût total Aucune donnée Participants (2) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire Ukrainian Academy of Sciences Ukraine Contribution de l’UE Aucune donnée Adresse 47,prospekt nauki 252028 Kiev 28 Voir sur la carte Coût total Aucune donnée Ukrainian Academy of Sciences Ukraine Contribution de l’UE Aucune donnée Adresse 47,prospekt nauki 252028 Kiev 28 Voir sur la carte Coût total Aucune donnée