Obiettivo Semiconductor sensors for boron neutron capture therapy. The Department of Radiation Physics at the Institute for Nuclear Research has good experience in semiconductor-based detectors for neutron measurements. The principle is based on the creation of radiaton defects in semiconductors under the influence of fast neutrons, which change the electrical properties of the semiconductor. As the threshold energy for creation of radiation defects in silicon is 13 eV, one can produce semiconductor dosimeters for neutron dose measurements with application in cancer therapy. In this project, it is proposed to carry out the following research: 1. The construction and testing of various types of integral semiconductor dosimeters for regitration of neutron doses with the energy 1 eV to 8 keV. 2. The construction and testing of detectors with different converters for defining the neutron flux density as a function of neutron energy. 3. The test of semiconductor sensors for medical purposes, especially for on-line monitoring. Programma(i) IC-PECO/COPERNICUS - Scientific and technological cooperation between the European Community and European non-member countries, 1992- Argomento(i) 0201 - CEEC participation in BIOMEDICAL AND HEALTH RESEARCH programme Invito a presentare proposte Data not available Meccanismo di finanziamento CSC - Cost-sharing contracts Coordinatore UNIVERSITAET BREMEN Contributo UE Nessun dato Indirizzo Leobener strasse 28334 Bremen Germania Mostra sulla mappa Costo totale Nessun dato Partecipanti (2) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Ukrainian Academy of Sciences Ucraina Contributo UE Nessun dato Indirizzo 47,prospekt nauki 252028 Kiev 28 Mostra sulla mappa Costo totale Nessun dato Ukrainian Academy of Sciences Ucraina Contributo UE Nessun dato Indirizzo 47,prospekt nauki 252028 Kiev 28 Mostra sulla mappa Costo totale Nessun dato