Objetivo The project is an investigation (basically experimental, but also theoretical) of the effects of various extended defects, particularly of dislocations, on the basic electrical (transport) properties of two-dimensional electron gas (2DEG) in III-V compound semiconductor hetero-structures. The properties chiefly concerned are the low temperature magneto-transport effects, i.e. the Shubnikov-de Haas effect and quantum Hall effect, and also the scattering mechanisms and mobility of the carriers in the 2DEG. The hetero-structures supporting the 2DEG, on which this work will be focused, are mainly the GaAlAs/GaAs and InGaAs/InP systems. The main line of work will consist of the study of the effects of controlled dislocation arrays on the 2DEG properties. These dislocations will be generated by plastic bending at high temperatures, as appropriate for the various host materials. Magneto-transport measurements and structural and optical characterisation of the hetero-structures will be performed. Programa(s) IC-PECO/COPERNICUS - Scientific and technological cooperation between the European Community and European non-member countries, 1992- Tema(s) Data not available Convocatoria de propuestas Data not available Régimen de financiación CSC - Cost-sharing contracts Coordinador Université des Sciences et Technologies de Lille Aportación de la UE Sin datos Dirección URA 234 CNRS, Bât. C6 59655 Villeneuve d'Ascq Cedex Francia Ver en el mapa Coste total Sin datos Participantes (1) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo Research Institute for Technical Physics Hungría Aportación de la UE Sin datos Dirección Ver en el mapa Coste total Sin datos
