Cel The objective of the present project is to fabricate and to study GaN-based heterostructure laser diodes grown by homoepitaxy on GaN substrates and emitting in the blue to near UV region. The growth of single crystal GaN substrates and the development of the most appropriate epitaxial growth technique and identification of the most suitable heterostructure represents the hard core in this study, which we expect will pave the way to a new generation of GaN based optoelectronic devices.To reach the final goal of producing GaN based lasers, MOVPE and GSMBE growth techniques will be used in this programme with specific goals. The most appropriate epitaxial technique will be kept for the laser structure fabrication.Solid state lasers operating in the blue and near U.V. spectral range will be key components in many important application areas. These areas include, but are not limited to, high-density optical storage systems such as CD-ROMs and compact disks, high resolution laser printers, digital imaging, visible holography, optical memories, optical computers and medical applications. The frequency doubling of existing high-power near infrared lasers, which is the competing technology, is necessarily bulkier, less efficient and more expensive than direct emission of light from a laser diode at the desired wavelength. Red, green and blue constitute the set of primary colours from which any desired colour can be obtained by colour-mixing as in the RGB phosphor matrix of a colour-TV screen. Dziedzina nauki engineering and technologymaterials engineeringcolorsnatural sciencesphysical sciencesopticslaser physics Program(-y) FP4-ESPRIT 4 - Specific research and technological development programme in the field of information technologies, 1994-1998 Temat(-y) 4.2 - Reactiveness to Industrial Needs Zaproszenie do składania wniosków Data not available System finansowania CSC - Cost-sharing contracts Koordynator Centre de Recherche Sur L'hetero-Epitaxie et Ses Applications (Centre National de la Recherche Scientifique) Wkład UE Brak danych Adres Rue Bernard Gregory 1 06560 Sophia Antipolis Francja Zobacz na mapie Koszt całkowity Brak danych Uczestnicy (5) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko Aixtron Semiconductor Tech. Gmbh Niemcy Wkład UE Brak danych Adres Kackerstrasse 15-17 52070 Aachen Zobacz na mapie Koszt całkowity Brak danych Institute de Micro-Optoelectronics Ecole Polytechnique Federale de Lausanne Szwajcaria Wkład UE Brak danych Adres 1015 Lausanne Zobacz na mapie Koszt całkowity Brak danych UNIVERSIDAD POLITECNICA DE MADRID Hiszpania Wkład UE Brak danych Adres Ramiro de Maeztu, 7 28040 MADRID Zobacz na mapie Koszt całkowity Brak danych UNIVERSITAET - GESAMTHOCHSCHULE PADERBORN Niemcy Wkład UE Brak danych Adres WARBURGER STRASSE 100 33098 PADERBORN Zobacz na mapie Koszt całkowity Brak danych University of Nottingham Zjednoczone Królestwo Wkład UE Brak danych Adres University Park NG7 2RD Nottingham Zobacz na mapie Linki Strona internetowa Opens in new window Koszt całkowity Brak danych