Obiettivo Modern electronics is based on semiconductor structures formed by the introduction of impurities into semiconductors, thus creating centres with shallow energy levels. The Siberian partner in Tomsk, Russia, has adopted over the last few years a non-traditional approach to creating device structures through doping semiconductors with impurities which create centres with deep energy levels. The resulting p-n-hstructures led to new devices, based on the ease which these structures allow a semiconductor with a low electron density to be obtained. New physical effects have been observed and new devices have also been created, such as GaAs avalanche switching diodes, high speed photodetectors with high sensitivity in the wavelength range 0.2 - 1.0 mm and fast, radiation-hard detectors for ionising radiation. The aims of the project are to enhance the understanding of GaAs with deep level dopants by theoretical, experimental and applied physics studies and to develop a number of specific new devices. Theoretically, these high resistivity materials, considered as systems of low electron density, are relatively poorly understood. The character of the electron spectrum is unknown, there is no representation of the screening effect and no understanding of the non-equilibrium processes. The strong Coulomb interaction among electrons in the high-resistivity layer stimulates collective excitations which require non-linear effects to be included in their description. Part of the work under this project will therefore be the development of a non-linear theory of collective excitations and screening in electron systems with low carrier density. Experimentally, the project participants will study the interaction mechanisms of charged particles and high energy photons with high-resistivity p-n-h structures and will study methods of enhancing the sensitivity of the structures to ionising radiation. The applied physics aspects of this project are the development of an optimum fabrication technology for simple and multi-electrode (microstrip) detectors of charged particles and of X-rays. These will find applications in charged particle tracking in the new generation of high energy collider accelerators, in molecular biology studies e.g. using synchrotron radiation sources, and in medical imaging applications. Further areas of application will also be vigorously pursued. Programma(i) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Argomento(i) 13 - High Energy Physics Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore UNIVERSITY OF GLASGOW Contributo UE Nessun dato Indirizzo UNIVERSITY AVENUE G12 8QQ GLASGOW Regno Unito Mostra sulla mappa Costo totale Nessun dato Partecipanti (3) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Institute of High Energy Physics Serpukhov Russia Contributo UE Nessun dato Indirizzo 142284 Protvino, Moscow Region Mostra sulla mappa Costo totale Nessun dato Siberian Physical Technical Institute Russia Contributo UE Nessun dato Indirizzo 634050 Tomsk Mostra sulla mappa Costo totale Nessun dato Università degli Studi di Bologna Italia Contributo UE Nessun dato Indirizzo Via Irnerio 46 40126 Bologna Mostra sulla mappa Costo totale Nessun dato
