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Contenu archivé le 2022-12-23

Thin-film semiconductors for device applications

Objectif



This project undertakes broad co-operation to investigate amorphous and microcrystalline thin-film semiconductors and their device applications. Films of a-Si:H, (c-Si and Si related alloys will be deposited by plasma-enhanced chemical vapour deposition (PECVD) in diode and triode reactors.

Plasma diagnostics and computer simulations will be applied for a better understanding and optimisation of the deposition process. The films will be broadly characterised by examining their structure, composition, optical and transport properties, defect structures and recombination mechanisms. Particular emphasis will be given to the stability of the material properties with respect to light exposure and carrier injection. Non-conventional deposition conditions will be used to improve the stability. The potential use of these semiconductors will be studied by preparing and investigating device structures such as Schottky barriers, pin-diodes and photodiodes. The combination of fundamental and applied research will be a particular feature of the project.

Appel à propositions

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Régime de financement

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Coordinateur

Philipps-Universität Marburg
Contribution de l’UE
Aucune donnée
Adresse
Renthof 5
35032 Marburg
Allemagne

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Coût total
Aucune donnée

Participants (7)