Obiettivo Silicon carbide (SiC) is recognised as having great potential for electronic device applications involving high temperatures, high radiation, high frequencies and also high power. A prerequisite for the further advance of a SiC-based semiconductor technology is the availability of low defect bulk crystals with defined electronic and crystallographic properties as a substrate for highly perfect epitaxial layers. The present status of crystal quality does not meet this requirement. It is generally acknowledged that stoichiometry of the gas phase and dopants during sublimation growth of SiC are key parameters which can influence the crystal modification and defect generation and hence the electronic material properties. But there is a great lack of knowledge on the correlation of constitutional process conditions and crystal quality. In this research, the effect of dopants and stoichiometry on the crystallographic and electronic properties of SiC crystals, will be studied. The influence of the following parameters will be investigated: mechanical, chemical and thermal treatment methods on single crystallinity; impurity doping and SiC composition of the gas phase on stabilisation of polytypes during the crystal growth process; and transition metal doping on the electronic properties.Optical, electrical and microstructural properties of the prepared crystal specimens will be analysed by different characterisation methods, e.g. photoluminescence, DLTS, and scanning electron microscopy. Numerical modelling of heat and mass transfer will be applied to give information on the constitutional conditions during the crystal growth process.The results of experimental and numerical studies will be compared to existing theories on polytype formation in SiC. Based on this analysis, concepts for the development of more advanced models on polytypism will be carried out. Programma(i) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Argomento(i) 15 - Condensed Matter Physics Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore Friedrich-Alexander-Universität Erlangen-Nürnberg Contributo UE Nessun dato Indirizzo Martensstraße 7 91058 Erlangen Germania Mostra sulla mappa Costo totale Nessun dato Partecipanti (2) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Russian Academy of Sciences Russia Contributo UE Nessun dato Indirizzo 194021 St. Petersburg Mostra sulla mappa Costo totale Nessun dato THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE Regno Unito Contributo UE Nessun dato Indirizzo Cavendish Laboratory, Madingley Road CB3 0HE CAMBRIDGE Mostra sulla mappa Costo totale Nessun dato
