Objective The aim of this project is to develop and demonstrate the feasibility of novel semiconductor devices for very high temperature operation. Such components are highly desirable for power, space and automotive applications.Improved characteristics of the fabricated devices will be based on the use of heterostructures operating at temperatures higher than 500 degrees C. Epitaxial growth of different polytypes of silicon carbide (SiC) on silicon carbide material as well as on SiC-aluminium nitride (AlN) solid solutions will be achieved at the Ioffe Institute. The fundamental properties of heterojunctions and different layers will be thoroughly investigated and modelled in the associated west European laboratories. Components such as diodes or junction field-effect transistors (JFETs) will be fabricated, the SiC-AlN layers being used as semi-insulating substrate. Programme(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Topic(s) 15 - Condensed Matter Physics Call for proposal Data not available Funding Scheme Data not available Coordinator Institut National Polytechnique de Grenoble EU contribution No data Address Avenue des Martyrs 23 38016 Grenoble France See on map Total cost No data Participants (4) Sort alphabetically Sort by EU Contribution Expand all Collapse all CEA - Commissariat à l'Energie Atomique France EU contribution No data Address 38054 Grenoble See on map Total cost No data Friedrich-Alexander-Universität Erlangen-Nürnberg Germany EU contribution No data Address 91058 Erlangen See on map Total cost No data National Academy of Sciences of Ukraine Ukraine EU contribution No data Address 252028 Kiev See on map Total cost No data Russian Academy of Sciences Russia EU contribution No data Address 194021 St. Petersburg See on map Total cost No data