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Contenido archivado el 2022-12-23

Growth and characterisation of group III-nitride based thin films and low-dimensional structures

Objetivo



This project will provide valuable new information on the growth and properties of low-dimensional structures based on the group III-nitrides. Growth will take place using a modified form of molecular beam epitaxy developed for this purpose at Nottingham. Lightly n-doped binary films of GaN and AlN will be grown, followed by alloy films of (AlGa)N. Finally, the three components will be combined to provide some of the first low-dimensional structures of this type available world-wide.

The films will be characterised by all five participating groups making optimal use of the expertise available at each institution. In Nottingham, films will be studied using in-situ AES and ex-situ using FIR techniques. In Ilmenau, modulation spectroscopy, and magnetotransport measurements will be used to study the nitrides. In St. Petersburg (group Zinov'ev), phonon relaxation rates will be studied using three optical techniques: photoluminescence (PL) in zero and quantizing magnetic fields, time resolved PL and RAMAN spectroscopy. At Belarus interband transitions will be studied using photoreflectance and electroreflectance techniques. In St. Petersburg (group Novikov), quantitative estimates of the chemical composition of the films will be made using specialist AES equipment employing standards acceptable in the MBE system.

From this wealth of information the likely prospects will be determined for device structures based on such materials systems.

Convocatoria de propuestas

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Régimen de financiación

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Coordinador

University of Nottingham
Aportación de la UE
Sin datos
Dirección
University Park
NG7 2RD Nottingham
Reino Unido

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Coste total
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Participantes (4)