Objetivo The main knowledge and technology to be transferred is the applicant's experience in characterization of grown-in and process-induced defects and stresses in semiconductors by means of X-ray diffraction techniques and his potential to contribute significantly to the research of surface damage depth profiling and lateral mapping after wafer surface preparation. His multiple beam diffracting technique can be useful base for the development of new techniques related to subsurface damage profiling and characterization and understanding of stresses and defects generation and treatment in semiconductor wafers. Ámbito científico natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity Programa(s) FP5-GROWTH - Programme for research technological development and demonstration on "Competitive and sustainable growth 1998-2002" Tema(s) 1.1.3.-5. - RTD Activities of a Generic Nature : materials and their technologies for production and transformation and new and improved materials and production technologies in the steel field Convocatoria de propuestas Data not available Régimen de financiación RGI - Research grants (individual fellowships) Coordinador FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Aportación de la UE Sin datos Dirección Krügerstraße 22 01326 WEISSIG - DRESDEN Alemania Ver en el mapa Coste total Sin datos
