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Gallium Arsenide Second-Window Quantum Dot Lasers

Cel

We propose to demonstrate in-plane and vertical cavity diode lasers operating at 1300nm using (Ga, In) As quantum dot emitters. These devices based on GaAs substrates are expected to exhibit superior characteristics compared to the classical GaInAsP on InP based devices, with the advantage of lower cost, compatibility with the well established GaAs processing technology, improved reliability and decreased temperature sensitivity. The project will demonstrate 1300nm optical links based on this all GaAs technology and compare the performances with 1300nm GaAs devices.


Słowa kluczowe

Zaproszenie do składania wniosków

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System finansowania

CSC - Cost-sharing contracts

Koordynator

ISTITUTO NAZIONALE PER LA FISICA DELLA MATERIA
Wkład UE
Brak danych
Adres
CORSO F. PERRONE 24
16152 GENOVA
Włochy

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Koszt całkowity
Brak danych

Uczestnicy (9)