Objectif The aim of this project is t o overcome all the disadvantages of the present CVD and PVD techniques. To achieve this result combinations of Physical Vapour Deposition (PVD) or Plasma Assisted Chemical Vapour Deposition (PACVD) enhanced by high energy ion beam bombardment will be studied. These studies will also of course, be combined with the necessary robotics to allow the treatment of complex geometrical shapes and to solve real industrial applications by producing new materials with high degree of reproducibility through total automation. In order to achieve thicker modified layers and higher implanted concentrations new processes involving both film deposition and ion implantation will be developed. The ion beam will play an important role in increasing the adhesion and uniformity of hte deposited film, and eventually in converting it into a chemically different material, e.g. a carbide or a nitride.The aim of this project is to overcome all the disadvantages of the present chemical vapour deposition (CVD) and physical vapour deposition (PVD) techniques. To achieve this combinations of PVD or plasma assisted chemical vapour deposition (PACVD) enhanced by high energy ion beam bombardment are studied.The results of this research are shown:Titanium nitride can be synthesised by numerous methods including CVD, PVD, PACVD, and ion beam assisted deposition (IBAD). The aim of this phase was to demonstrate the utility of ion assistance in low temperature deposition process for increasing the film quality and performance.By comparison of different properties, mainly morphology, chemical composition, mechanical properties and chemical resistance, it has been shown that it is possible to obtain titanium nitrate (TiN) at low temperature (250 C) with an acceptable growth rate; the stoichiometry can be adjusted in a large range of composition; the coatings are crystalline to X-ray diffraction (XRD) with a preferential orientation linked to the incident ion energy.High energy bombardment leads to columnar structure:Ion beam assisted deposition leads to film densification. The mechanism of the densification may be the related atomic displacement in the collision cascades, enhanced surface and bulk diffusion, recoil implantation and ion mixing mechanisms. One consequence of IBAD is void elimination.Because of the line of sight nature of conventional IBAD a manipulator stage is required to rotate and translate the target in the beam to bombard all sides of the target.To avoid this manipulator a new process is developed. In PSIAD (plasma source ion assisted deposition) the target is placed directly in the plasma source and is pulse biased to negative potential relative to the chamber wall. Ions are accelerated towards the target surface, across the plasma sheath, eliminating the line of sight problems of conventional IBAD and thus all the exposed areas are bom barded simultaneously. The elimination of target manipulation is a particular advantage of PSIAD, especially for heavy and large targets.The next stage will be the design and construction of a prototype machine. Champ scientifique natural scienceschemical sciencesinorganic chemistryinorganic compoundsnatural scienceschemical sciencesinorganic chemistrytransition metalsnatural scienceschemical sciencesinorganic chemistrypost-transition metalsengineering and technologymaterials engineeringcoating and filmsengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringrobotics Programme(s) FP1-BRITE - Multiannual research and development programme (EEC) in the fields of basic technological research and the applications of new technologies (BRITE), 1985-1988 Thème(s) Data not available Appel à propositions Data not available Régime de financement Data not available Coordinateur Coating Développement SA Contribution de l’UE Aucune donnée Adresse 26 rue de la Télématique 42000 Saint-Étienne France Voir sur la carte Coût total Aucune donnée Participants (1) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire ARCHER TECHNICOAT LTD Royaume-Uni Contribution de l’UE Aucune donnée Adresse Unit E Progress Road, Sands Industrial Estate Voir sur la carte Coût total Aucune donnée