Objectif In view of demonstrating the technical feasibility of silicon based, high efficiency room temperature light emitting devices (LED), the primary objectives of this Project are:1. to find practical approaches for the creation of suitable dislocation structures or of alternative structures (like misfit dislocations in Si-Ge heterostructures, dislocation loops at Si/SiO2 interfaces and Si nanocrystals in amorphous silicon) such to enhance the quantum efficiency of the dislocation-related luminescence (DRL) or of the intrinsic emission of silicon at room temperature in view of applications for silicon-based LEDs. To this purpose, several processes of dislocation generation will be employed, in addition to the conventional plastic deformation at high temperature2. to obtain a clear understanding of the physics of the dislocation-assisted light emission, of the correlations between the dislocation structure and their emission properties, of the role of carbon, oxygen and other light impurities like hydrogen and nitrogen as well as of metallic impurities on their emission properties and of the correlation between device surface quality, configuration and luminescence yield3. to carry out theoretical investigations on the correlation between core structure of extended defects and optical and electronic properties of dislocationsThe research activities will be addressed to the preparation and characterization of different dislocation structures, to the analysis of their photo- and electro-luminescence in the absence and presence of impurities and to the development of prototypes of light emitting devices, according to the following tasks:TASK 1. Set up of dislocation generation procedures and role of different dislocation structures on the photoluminescence (PL) and electroluminescence (EL) efficiency;TASK 2. Effect of impurities on the PL and EL efficiency;TASK 3. Development of light-emitting structures with effective dislocation-related and band-to-band luminescence based on low dimensional structures and structures with SiO2-like precipitate.The physics of these processes will be studied on the base of the experimental results obtained by the fulfilment of the objectives of the tasks 1-3 and of the results of theoretical modelling, carried out under theTASK 4. Computer modelling of light emitting centers.The Deliverables will essentially consist in added knowledge and in prototype light emitting devices. Both the scientific results and the features of the EL devices will be suitably presented and discussed in the annual Progress Reports, in technical papers published on international Journals and on a web page, edited by the coordinator, with all the needed links.We intend to present the results also at international Conferences. The first will be the EDS (Extended Defects in Semiconductors) 2002 Conference, to be held in June 2002, co-organized by A. Cavallini and S.Pizzini. Programme(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Thème(s) 1B - Condensed Matter, Optics and Plasma Physics OPEN - OPEN Call Appel à propositions Data not available Régime de financement Data not available Coordinateur Universita di Milano-Bicocca Contribution de l’UE Aucune donnée Adresse Via Cozzi, 53 20125 Milano Italie Voir sur la carte Coût total Aucune donnée Participants (6) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire Department of Physics, University of Bologna Italie Contribution de l’UE Aucune donnée Adresse VialeBerti Pichat 6/2 40127 Bologna Voir sur la carte Coût total Aucune donnée Russian Academy of Sciences Russie Contribution de l’UE Aucune donnée Adresse Politekhnicheskaya 26 194021 St. Petersburg Voir sur la carte Coût total Aucune donnée Russian Academy of Sciences Russie Contribution de l’UE Aucune donnée Adresse Tsentral'naja, 4v, flat 42 142432 Chernogolovka, Moscow district Voir sur la carte Coût total Aucune donnée Russian Academy of Sciences Russie Contribution de l’UE Aucune donnée Adresse 142432 Chernogolovka, Moscow district Voir sur la carte Coût total Aucune donnée University of Exeter Royaume-Uni Contribution de l’UE Aucune donnée Adresse Stocker Rd EX44QL Exeter Voir sur la carte Coût total Aucune donnée Université Aix-Marseille 3 France Contribution de l’UE Aucune donnée Adresse Avenue Escadrille Normandie-Niemen, case 142 13397 Marseille cedex 20 Voir sur la carte Coût total Aucune donnée