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Zawartość zarchiwizowana w dniu 2022-12-23

Dislocations, extended defects and interfaces at nanoparticles as effective sources of room temperature photo- and electro-luminescence in silicon and silicon-germanium

Cel

In view of demonstrating the technical feasibility of silicon based, high efficiency room temperature light emitting devices (LED), the primary objectives of this Project are:

1. to find practical approaches for the creation of suitable dislocation structures or of alternative structures (like misfit dislocations in Si-Ge heterostructures, dislocation loops at Si/SiO2 interfaces and Si nanocrystals in amorphous silicon) such to enhance the quantum efficiency of the dislocation-related luminescence (DRL) or of the intrinsic emission of silicon at room temperature in view of applications for silicon-based LEDs. To this purpose, several processes of dislocation generation will be employed, in addition to the conventional plastic deformation at high temperature

2. to obtain a clear understanding of the physics of the dislocation-assisted light emission, of the correlations between the dislocation structure and their emission properties, of the role of carbon, oxygen and other light impurities like hydrogen and nitrogen as well as of metallic impurities on their emission properties and of the correlation between device surface quality, configuration and luminescence yield

3. to carry out theoretical investigations on the correlation between core structure of extended defects and optical and electronic properties of dislocations

The research activities will be addressed to the preparation and characterization of different dislocation structures, to the analysis of their photo- and electro-luminescence in the absence and presence of impurities and to the development of prototypes of light emitting devices, according to the following tasks:

TASK 1. Set up of dislocation generation procedures and role of different dislocation structures on the photoluminescence (PL) and electroluminescence (EL) efficiency;

TASK 2. Effect of impurities on the PL and EL efficiency;

TASK 3. Development of light-emitting structures with effective dislocation-related and band-to-band luminescence based on low dimensional structures and structures with SiO2-like precipitate.

The physics of these processes will be studied on the base of the experimental results obtained by the fulfilment of the objectives of the tasks 1-3 and of the results of theoretical modelling, carried out under the

TASK 4. Computer modelling of light emitting centers.

The Deliverables will essentially consist in added knowledge and in prototype light emitting devices. Both the scientific results and the features of the EL devices will be suitably presented and discussed in the annual Progress Reports, in technical papers published on international Journals and on a web page, edited by the coordinator, with all the needed links.
We intend to present the results also at international Conferences. The first will be the EDS (Extended Defects in Semiconductors) 2002 Conference, to be held in June 2002, co-organized by A. Cavallini and S.Pizzini.

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Koordynator

Universita di Milano-Bicocca
Wkład UE
Brak danych
Adres
Via Cozzi, 53
20125 Milano
Włochy

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Koszt całkowity
Brak danych

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Ostatnia aktualizacja: 30 Października 2002

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Permalink: https://cordis.europa.eu/project/id/INTAS-2001-00194/pl

European Union, 2024