Objetivo The main goal of this project is to design new types of ultra-high power single ps- pulse laser diodes, super-fast high-current switches based on bipolar GaAs transistor, and to apply them especially in high-resolution laser radars intended for industrial measurements.The most significant scientific objective of this work involve the design, fabrication and characterization of new types of heterostructure laser diode in which optical gain and output power are controlled by the electric field in the active layer. Two alternative approaches are planned to be utilized: one associated with Q-switching in the laser structures with a specific bandgap profile and a position of the carrier injector, and the other one exploiting gain-switching in the structures with optical gain controlled by carrier heating.Associated task consists in simulation, design, fabrication and characterization of new super-fast (sub nanosecond) high-current (10-200 A) high-voltage GaAs avalanche transistor for the pumping of the laser diodes. The physical mechanism, which determines the expected unique parameters of the current switch, consists in strong reconstruction of the field domain in the collector of avalanche transistor at extreme current densities.The most significant practical objective is to realize pulsed time-of-flight laser radar enabling one to achieve precision of a level of 1mm in a single shot measurement to non-cooperative targets in a distance measurement range of several meters. This study involves the design of laser diode transmitters, development of the receiver channel, timing discrimination and time interval measurement units needed in the construction of the laser radar as well as the performance analysis and measurements.The other important practical objectives are to apply the novel devices for precise 3D imaging, to design a high-sensitive receiving channel using the concept of extended-time sampling technique, to design ultra-wideband photodetectors with optimal performance, and to develop highly packaged laser radar transmitters on high-resistive silicon (HRS). Programa(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Tema(s) 1B - Condensed Matter, Optics and Plasma Physics OPEN - OPEN Call Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador University of Oulu Aportación de la UE Sin datos Dirección 90014 Oulu Finlandia Ver en el mapa Coste total Sin datos Participantes (5) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo ELMA-MALACHIT Rusia Aportación de la UE Sin datos Dirección 4922 Street 103460 Moscow, Zelenograd Ver en el mapa Coste total Sin datos INJECT Rusia Aportación de la UE Sin datos Dirección Pr. 50 let Oktyabrya 101 410601 Saratov Ver en el mapa Coste total Sin datos Russian Academy of Sciences Rusia Aportación de la UE Sin datos Dirección Politekhnicheskaya 26 194021 St. Petersburg Ver en el mapa Coste total Sin datos St.Petersburg State Technical University Rusia Aportación de la UE Sin datos Dirección 29 Politekhnicheskaya Street 195251 St. Petersburg Ver en el mapa Coste total Sin datos Universität Kassel Alemania Aportación de la UE Sin datos Dirección Wilhelmshoeher Allee 73 34121 Kassel Ver en el mapa Coste total Sin datos
