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Intraband and interband transitions of carriers in type I and type II nanostructures with quantum dots, quantum dot molecules and impurities

Ziel

The project is devoted to the investigations of intraband and interband carrier transitions in type I and type II nanostructures with quantum dots, quantum dot molecules and impurities. The main objectives are the following: the experimental and theoretical investigation of new optical, photoelectrical and transport phenomena, connected with intraband and interband transitions of electrons and holes in nanostructures with quantum dots (QDs), quantum dot molecules (QDMs) and shallow impurities (the type I InAs/GaAs and type II Ge/Si nanoheterostructures with self-assembled QDs, QDMs and impurities will be studied); the experimental establishment of energy spectra and other parameters of small size (about 10 nm) Ge/Si QDs and QDMs, InAs/GaAs QDs and QDMs as well as shallow impurities in structures with quantum wells (QWs); the comparison of experimental data with theoretical calculations taking into account elastic deformation effects, the arbitrary shape of QDs, QDMs and clusters, Coulomb interaction in dense arrays of Ge/Si QDs and QDMs. The first step towards development of mid infrared (MIR) and THz (far infrared, FIR) emitters of new types based on intraband carrier transitions between levels of QDs, QDMs and impurities will be done, namely: the observation of MIR (5 - 18 mm) and THz (FIR, 80 - 200 mm) spontaneous emission and interlevel population inversion of carriers in nanostructures including quantum cascade structures with QDMs and shallow impurities.
The following phenomena will be studied in abovementioned structures: intraband mid-infrared (MIR) spontaneous emission under optical pumping, photoinduced intraband absorption, MIR absorption in doped structures, interband Burstein-Moss effect (due to Pauli blocking), lateral and vertical photoconductivity, spin-dependent phenomena in structures with Ge/Si QDs. The role of collective effects and Coulomb interaction will be established in dense arrays of Ge/Si QDs. The mechanism of interband photoconductivity connected with interlevel hole transitions will be ascertained also in structures with Ge/Si QDs.
The results of intraband and interband optical phenomena studies will allow to find experimentally the energy spectra of QDs and QDMs, the probabilities of optical intraband and interband transitions, their dependence on light polarization. Experimental data will be explained and compared with calculated ones.
The THz emission from quantum cascade structures with artificial InAs/GaAs quantum dot molecules and structures with shallow impurities will be observed and investigated for the first time. These structures are promising for the development of THz emitters.
The investigations will be carried out in cooperation with West-East, East-East and West-West teams. Young scientists will be involved in the studies.

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Koordinator

Paul Scherrer Institut Villigen
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Adresse

5232 Villigen-PSI
Schweiz

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Beteiligte (5)

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Letzte Aktualisierung: 30 Oktober 2002

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Permalink: https://cordis.europa.eu/project/id/INTAS-2001-00615/de

European Union, 2024