Cel We aim to design, develop and investigate new non-linear optical elements based on novel non-linear glasses with semiconductor quantum dots for pulse shaping and Q-switching and/or mode-locking lasers for applications in telematics. This would be particularly in the 1.3 - 1.5micrometre range of wavelengths, though there is also interest in taking this to longer wavelengths for sensing applications.There is currently significant interest in both active and passive high-speed optical modulation at the telecom wavelengths. Applications include the suppression of Gordon-Haus jitter and soliton-soliton interactions in long haul fibre transmission systems; passive mode locking of erbium-doped fibre lasers for telecommunication applications and automotive radar applications at eye safe wavelengths. The saturable absorbers involved in these devices must operate on short timescales, be readily mass-produced, and be well characterised.The applicants propose to develop and investigate new materials with non-linear optical properties based on phosphate and germinate glasses doped with IV-VI (e.g. PbSe, PbTe, PbS) and CdTe semiconductor quantum dots. These materials, due to quantum confinement phenomenon, can demonstrate high optical nonlinearities in a wide spectral range, which depend on the size and size distribution of the semiconductor nanocrystals. Thus these materials are particularly attractive for using as non-linear optical elements for different optoelectronic devices, for example, as saturable absorbers optical switching, Q-switching or mode-locking lasers (including microchip lasers) for telematics at different wavelengths in the near and mid infrared region.On the other hand, the technological features of the preparation of semiconductor quantum dots in glasses (conventional batch melting technique) may give a prominent price advantage over other materials used as passive shutters, because they need more expensive procedures such as crystal growth or MBE techniques.Semiconductor-doped glasses have been applied for Q-switching and mode-locking of a number of lasers operating at wavelengths in the 0.7-0.9 1.06-1.08 and 1.2 mm regions. However such devices are not used in commercial lasers, and for longer wavelength lasers they are completely lacking. The main reasons are(i) insufficient knowledge of the physical and particularly optical properties of quantum dots for a variety of semiconductor materials;(ii) technological problems in the synthesis of glasses with high doping concentration and with the necessary particle size and narrow size distribution of the semiconductor quantum dots.The applicants of the Project have a rich experience in(i) the preparation of semiconductor quantum dots in different glass matrices with narrow size distribution of dots;(ii) in different physical methods of characterization of such materials;(iii) in theoretical description of optical properties in nanosized semiconductor materials;(iv) in experimental studies of nonlinear optical processes in materials using different techniques (pump-probe, z-scan, intensity-dependent transmission); and (v) in designing lasers of different configurations with intracavity saturable absorbers pumped by flash-lamps and or laser diodes.The applicants will cooperate in this interdisciplinary project to develop and study from different points of view a new class of materials - glasses embedded with IV-VI semiconductor quantum dots.The results of the Project will be(i) the design of a technological procedure for the synthesis of glasses with embedded quantum dots of necessary size and narrow size distribution;(ii) a report on the set of evaluated optical parameters (ground and excited state absorption cross sections, saturation intensities and energy densities, nonsaturated losses, and optical damage thresholds) and time constants of relaxation processes for the quantum dots;(iii) theoretical descriptions and simulations of the energy structure and model of the linear and nonlinear optical phenomena in IV-VI semiconductor quantum dots embedded in glasses; and(iv) a description of new nonlinear optical elements for telematics applications (e.g. saturable absorbers for microchip lasers operated at 1.5 and 2 microns). All these will provide new knowledge on the physics of semiconductor quantum dots and will open a way to an a-priory understanding of the non-linearities of semiconductor-doped glasses and to the design of optically non-linear units for other uses in telematics. Program(-y) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Temat(-y) 1B - Condensed Matter, Optics and Plasma Physics OPEN - OPEN Call Zaproszenie do składania wniosków Data not available System finansowania Data not available Koordynator University of St. Andrews Wkład UE Brak danych Adres North Haugh KY16 9SS St. Andrews Zjednoczone Królestwo Zobacz na mapie Koszt całkowity Brak danych Uczestnicy (5) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko International Laser Center Białoruś Wkład UE Brak danych Adres F. Skaryna Ave., #65, bldg. 17 220027 Minsk Zobacz na mapie Koszt całkowity Brak danych Russian Academy of Sciences Rosja Wkład UE Brak danych Adres Politekhnicheskaya 26 194021 St. Petersburg Zobacz na mapie Koszt całkowity Brak danych St.Petersburg State Technical University Rosja Wkład UE Brak danych Adres Polytechnicjheskaja ulitsa, 29 195251 St. Petersburg Zobacz na mapie Koszt całkowity Brak danych Universidad Publica de Navarra Hiszpania Wkład UE Brak danych Adres 31006 Pamplona Zobacz na mapie Koszt całkowity Brak danych Université de Paris 7 Francja Wkład UE Brak danych Adres Place Jussieu 2 75251 Paris Cedex 05 Zobacz na mapie Koszt całkowity Brak danych
