Objective
Localized electronic states in the gap of glassy chalcogenide semiconductors have over the years been a primary model system for dispersive transport and optical absorption in disordered semiconductors, and for the phenomenon of charged defects with negative effective electron correlation energy. As a consequence, much is known in general about those correlated states, but at the same time, only vague notions exist on the microscopic nature of either the defects or the electronic charge and energy transfer processes they are involved in.
Recently, promising results in fibre optic communications and in the area of sensing have been obtained with chalcogenide glasses (CG) doped with rare-earth ions. These applications have raised renewed interest in the charged defects since they interact with the rare-earth ions. The project therefore proposes to prepare a wide-ranging series of such doped CG, using the prototypal As-S as hosts, and a series of Ga-La-S glasses which have great potential as new-generation photonic materials for amplifiers, sources, sensors, and so on, when doped with rare-earth ions Nd3+, Pr3+, Dy3+, Ho3+ and a transition metal Mn2+.
These glasses will then be examined with an extensive series of electrical and optical techniques which are valuable for the study of localized states in semiconductors, including: photoluminescence; optical absorption and optical modulation spectroscopies; photoconduction; photocapacitance spectroscopy; infra-red vibrational spectroscopy; the study of photoinduced absorption and anisotropies. The results will provide a model in a multi-dimensional parameter space of the energy and kinetic parameters of electron exchange processes which fuel the optical luminescence required for photonic applications. This will allow construction of microscopic models for defect states and their interaction with the added rare-earth ions in ground- and excited states, and with the electronic transport processes.
The experimental work will be done by three of the four participating Institutes. The equipment available at the three labs is complementary. The fourth participant, a theoretical physics group, will work out models for transport and the density of gap states that take the correlated nature of the native defects into account. Planned mutual visits and joint participation at Study Institutes will be used by both experimentalists and theoreticians to work out comprehensive models that can also account for the interactions between the correlated native defects and added impurities.
It is the intention of this experienced and appropriate group of scientists to generate fundamental data that will be vital to the deployment of the next generation of non-silica glass photonic devices.
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Programme(s)
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Topic(s)
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Funding Scheme
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Coordinator
3001 Leuven-Heverlee
Belgium
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.