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Contenuto archiviato il 2022-12-23

A new type of semiconductor scintillators: X-ray luminescence, cathodoluminescence, radiation stability and optoelectronic properties of isovalently doped zinc selenide crystals

Obiettivo

Most widely used CsI(Tl), NaI(Tl), CWO, BGO, scintillators due to their low radiation stability of the output parameters, hygroscopicity, high level afterglow, low quantum yield (light output) cannot meet the modern requirements in the new fields of radiation instrument making such as X-ray tomography and introscopy, dosimetry of high power flows of ionising radiation. For these purposes a new type of scintillators on the basic of isovalent doped (Te, Cd, Se, S, O) zinc selenide crystals has been created. They have the light output in the energy range of X-ray radiation up to 170 % with respect to CsI(Tl), afterglow level after 10 ms - less than 0.05% and radiation hardness more, than 1000 times is higher than for CsI(Tl) crystals. This type of SCS crystals has already found its practical application. However, the investigations of SCS unique properties including an anomalous high quantum yield of cathodoluminescence, light output of X-ray luminescence, radiation hardness and optoelectronic characteristics are being now at the initial stage.

The objectives of the Proposals presented is to perform the complex investigation of this new family of semiconductor scintillating materials, including studies of optical, scintillation, electrical properties, the spectral, temporal and temperature dependencies of luminescence under X-rays, electron and ion excitations; to understand high radiation hardness and to determinate mechanisms of degradation of SCS crystal output properties under various kinds of power radiation flows. These will give the possibility to determine dopant profiles, structure configuration and charge state of the optically active centres, to build the energetic diagram and thermodynamic model of as-grown and radiation-induced defects of the crystal lattice. The unique combination of properties (semiconductor and highly efficient scintillator at the same time) show the ways for a creation and elaboration of new type scintielectronic detectors - "semiconductor scintillator - surface photosensitive heterojunction" (ZnSe(Te) - ZnTe, CdSe, CdS, CdTe).

Practical significance of this Project is application of the results for the elaboration of a methods of semiconducting scintillator production in the industrial conditions with a high degree of reproducibility of their output parameters, possibility to forecast the properties and to widen application fields of newly created scintillators, cathodo-, radioluminescent screens and new types of detectors on the basis of AIIBVI compounds.

This programme of research involves the scientists and experts from Sweden, Norway, Ukraine and Uzbekistan in the field of crystal growth, optics, solid state physics, nuclear physics, optoelectronics. Thus the programme has synergy and complementary partners, which will mean that young researchers in the former Soviet Union will have the opportunity to develop their researchers skills across a broad spectrum of activities in materials science. In addition there will be an exchange of skills and techniques between various research centres in the INTAS and NIS countries.

Invito a presentare proposte

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Meccanismo di finanziamento

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Coordinatore

Royal Institute of Technology
Contributo UE
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Indirizzo
Frescativagen Street 24
104 05 Stockholm
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Partecipanti (4)