Objective Single crystals of CuIn3Se5, CuGa3Se5, CuIn4Se6, CuIn5Se8 and CuGa5Se8 will be synthesised using the Bridgmann (vertical and horizontal), Bridgmann-Stockbarger (vertical) at Minsk, and chemical vapour transport methods at Chisinau. Thin films deposition of the same materials will involve "flash" evaporation (Madrid) and laser ablation techniques (Minsk). A well-established relationship between bulk and thin film growth technology and physical properties is expected. The composition of the crystals and films obtained will be measured by energy dispersive X-ray analysis, total transmission X-ray fluorescence and inductive coupled plasma mass spectroscopy (Madrid). Their crystal structure and cell parameters will be determined by X-ray diffraction as well as transmission and scanning electron microscopies (Minsk and Madrid). Solid-state transformations and phase transitions in the materials will be studied using differential-thermal analysis (Minsk). The electronic transport properties will be characterised using conventional Hall effect, conductivity and capacitance-voltage measurements (St. Petersburg, Tallinn). By combining the latter with the admittance spectroscopy technique, the defect spatial distribution will be determined (Tallinn). Carrier concentration and carrier diffusion parameters using the infrared quasi-elastic electron (hole) light scattering (QLS) spectra in single crystals and thin films will be done using a novel technique based on inelastic scattering of light. This measurement will be carried out for different polarizations of incident and scattered light with respect to the sample orientation (St. Petersburg). Polarized QLS measurements will allow discriminating between different fluctuation mechanisms involved. The band gap values of the crystals and films will be determined from transmission and reflection spectra and photoluminescence measurements (Chisinau). The temperature dependence of the energy gap and the Urbach tail will be studied and analysed in the framework of different models, and some important empirical parameters, like the effective (average) and the cut-off phonon energy, will be estimated. Second harmonic generation in reflection measurements will provide new information concerning the structure disordering of the samples, as well as the morphology and structure of the textured polycrystalline thin films (Chisinau). In addition, photoluminescence spectra will provide information about the nature of the defect energy levels and polarised photoelectrical spectroscopy (St. Petersburg) will help in the interpretation of the nature of such crystal defects. Programme(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Topic(s) OPEN - OPEN Call Call for proposal Data not available Funding Scheme Data not available Coordinator Universidad Autonoma de Madrid EU contribution No data Address carretera de Colmenar Km15 28049 Madrid Spain See on map Links Website Opens in new window Total cost No data Participants (4) Sort alphabetically Sort by EU Contribution Expand all Collapse all Belarusian State University of Informatics and Radioelectronics optoelectronics Belarus EU contribution No data Address P.Brovka 6 220027 Minsk See on map Total cost No data Institute of Applied Physics Moldova EU contribution No data Address Academie 5 MD-2028 Chisinau See on map Total cost No data Ioffe Physico-Technical Institute Russia EU contribution No data Address Polytekhnicheskaya 26 194021 St. Peterburg See on map Total cost No data TALLINN TECHNICAL UNIVERSITY Estonia EU contribution No data Address EHITAJATE TEE, 5 TALLINN See on map Total cost No data