Obiettivo We will explore advanced gate stacks for ultimate scaling of silicon based devices beyond the 45nm technology node. The firstobjective will be to find suitable metal oxide dielectric materials to replace the long standing silicon dioxide from the transisto rgate. The materials must have a dielectric constant higher than 30 and a high thermal stability in contact with silicon, in orderto obtain equivalent oxide thickness (EOT) 0.5nm or lower. The second objective will be to develop appropriate models for thea nalysis of the electrical data in order to extract accurate values of EOT, interface trap density, and flat band voltage shifts. Toachieve the objectives we have broken our workplan in four priorities which are: materials preparation; post-depositiontreatm ent; device fabrication and testing; data analysis. To implement the workplan we are going to exchange scientistsbetween the academic institution NCSR-'Demokritos' and the industrial organization Philips Research Leuven. Philips willlearn from "Demokritos" about non-traditional material preparation methodologies based on molecular beam epitaxy(deposition) and structural characterization of metal oxides and interfaces. On the other hand NCSR will learn from Philipsabout fabrication and electrical testing of high-k devices. The immense interest of the industry in exploring new materials andassociated equipment at a low cost without disrupting the main process flow, guarantees that this collaboration will developinto a lasting strategic partnership. Campo scientifico engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringcomputer hardwarecomputer processorsnatural scienceschemical sciencesinorganic chemistryinorganic compoundsnatural scienceschemical sciencesinorganic chemistrytransition metalsnatural scienceschemical sciencesinorganic chemistrymetalloidsengineering and technologynanotechnologynanoelectronics Parole chiave High-k gates dielectrics metal oxides molecular beam epitaxy transistor Programma(i) FP6-MOBILITY - Human resources and Mobility in the specific programme for research, technological development and demonstration "Structuring the European Research Area" under the Sixth Framework Programme 2002-2006 Argomento(i) MOBILITY-1.3 - Marie Curie Host Fellowships - Transfer of knowledge (TOK) Invito a presentare proposte FP6-2002-MOBILITY-3 Vedi altri progetti per questo bando Meccanismo di finanziamento TOK - Marie Curie actions-Transfer of Knowledge Coordinatore NATIONAL CENTER FOR SCIENTIFIC RESEARCH "DEMOKRITOS" Contributo UE Nessun dato Indirizzo Patriarchou Gregoriou Str. 60228 AGHIA PARASKEVI Grecia Mostra sulla mappa Costo totale Nessun dato Partecipanti (1) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto NXP SEMICONDUCTORS BELGIUM N.V. Belgio Contributo UE Nessun dato Indirizzo INTERLEUVENLAAN 80 LEUVEN Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato
