Objectif This research proposal aims to study the correlation between the defects generated by the radiation and the degradation observed in the macroscopic characteristics of microelectronic devices, following this strategy, we will be able to develop and obtain new materials and devices more resistant to radiation. The research activities are divided in two branches. The first objective is to investigate the radiation hardening of silicon detectors, to be used especially in High Energy Physics experiments.Our interest will mainly focus on the evaluation of the radiation hardness of standard and oxygen-enriched High Resistivity silicon. The analysis will be performed on both, test structures and full-size radiation detectors. The main specific potential advantages and drawbacks in detectors processing with oxygen-rich material will be investigated. Based on the analysis of the experimental outcome, as well as on technological and electrical simulation results, it is expected to improve the process technology, as well as the silicon radiation detectors design.Our second objective is to study the radiation effects on the performance and reliability of thin gate dielectrics and CMOS transistors, which are essential for the correct circuits operation in high radiation environments. Our interest will focus on the mechanisms that lead to the radiation-induced degradation of the gate dielectric layers subjected to high-energy irradiations. Especial emphasis will be given to the electrical stability and post irradiation response of the generated damage.The thermal and electrical annealing kinetics of the radiation-induced damage will be determined. It is expected to elaborate degradation models enabling prediction of device performance and reliability in radiation-harsh environments, as well as Guidelines for hardening the technologies. Champ scientifique humanitieshistory and archaeologyhistorynatural scienceschemical sciencesinorganic chemistrymetalloidsnatural sciencesphysical sciencestheoretical physics Programme(s) FP6-MOBILITY - Human resources and Mobility in the specific programme for research, technological development and demonstration "Structuring the European Research Area" under the Sixth Framework Programme 2002-2006 Thème(s) MOBILITY-4.1 - Marie Curie European Reintegration Grants (ERG) Appel à propositions FP6-2002-MOBILITY-11 Voir d’autres projets de cet appel Régime de financement ERG - Marie Curie actions-European Re-integration Grants Coordinateur CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS Contribution de l’UE Aucune donnée Adresse Calle Serrano 117 MADRID Espagne Voir sur la carte Coût total Aucune donnée
