Objetivo The problem of the uniformity and reproducibility of GaInAsP (1.3 micron wavelength) epitaxial layers suitable for optoelectronics devices was addressed using LP-MOCVD growth process on 2" InP substrates. The problem of the uniformity and reproducibility of gallium indium arsenic phosphide (1.3 micron wavelength) epitaxial layers suitable for optoelectronics devices has been addressed using low pressure metal organic chemical vapour deposition (LP-MOCVD) growth process on inch indium phosphide substrates. The work on materials has been supported by extensive material characterization. In particular, the homogeneity of both substrates and epilayers has been measured nondestructively using spatially resolved photoluminescence. Ultimate validation of the material has been provided by gallium indium arsenic phosphide optical waveguide and gallium indium arsenide metal insulator semiconductor field effect transistor (MISFET) devices.A statistical analysis of the losses of waveguides distributed over a whole 2 inch wafer has demonstrated that more than 60% of the waveguides exhibit losses below 0.8 dB Gallium indium arsenide, which was the target in this project. Besides, the distribution of the waveguide losses has been correlated with the bandgap wavelength variation over the 2 inch wafer. The electrical properties of gallium indium arsenide epitaxial layers (ie the sheet resistance, external transconductance and the effective mobility) were found to be quite homogeneous over the 2 inch wafer.Gallium indium arsenide MISFET with 1.5 micron gate length exhibited a cut off frequency of 16 GHz and a maximum oscillation frequency of 14 GHz. The MISFET showed a response time of 70 ps. However, due to the shift in the transfer characteristic of the inverters, no oscillation of the ring oscillator circuits could be recorded.The project has demonstrated that high quality (both optical and electrical) uniform gallium indium arsenide phosphide epitaxial layers can be obtained reproducibly on 2 inch indium phosphide substrates using a commercially available LP-MOCVD growth process.The work on materials has been supported by extensive material characterisation. In particular, the homogeneity of both substrates and epilayers has been measured non-destructively using spatially resolved photoluminescence. Ultimate validation of the material has been provided by GaInAsP optical waveguide and GaInAs MISFET devices. Ámbito científico natural sciencesphysical scienceselectromagnetism and electronicsoptoelectronicsnatural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Programa(s) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Tema(s) Data not available Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador Laboratoire d'Électronique Philips Aportación de la UE Sin datos Dirección 22 avenue Descartes 94453 Limeil-Brevannes Francia Ver en el mapa Coste total Sin datos Participantes (3) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo AIXTRON GmbH Alemania Aportación de la UE Sin datos Dirección Jülicher Straße 336-338 52070 Aachen Ver en el mapa Coste total Sin datos Imperial Chemical Industries plc (ICI) Reino Unido Aportación de la UE Sin datos Dirección 34 Maryland Road MK15 8HJ Tongwell Ver en el mapa Coste total Sin datos Rheinisch-Westfälische Technische Hochschule Aachen (RWTH) Alemania Aportación de la UE Sin datos Dirección Steinbachstraße 53B 52074 Aachen Ver en el mapa Coste total Sin datos
