Cel The GIANTS project aimed to examine the high-speed performance of a number of GaInAs novel transistors. State-of-the-art circuits for IT systems were to be produced using those devices exhibiting the greatest performance potential and suitability for integration. GaInAs-based material structures were investigated because of their considerably superior transport properties compared to conventional GaAs structures (eg higher electron mobility and higher electron saturation velocity). These advantages are expected to lead to a new generation of high-speed devices and circuits.The device types initially chosen for investigation were pseudomorphic high electron mobility transistors (HEMT), lattice matched HEMTs, barrier enhanced metal semiconductor field effect transistors (MESFET), and pseudomorphic semiconductor insulator semiconductor field effect transistors (SISFET). Both metal organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) epitaxial growth techniques are being used to produce high quality material for device fabrication. These growth processes are being optimised in the light of device results.The best of these devices have now been selected for the initial development of integrated circuit technologies, which will be demonstrated by the design and fabrication of example integrated circuits (IC).The project aimed to examine the high speed performance of a number of gallium indium arsenic novel transistors. State of the art circuits for information technology (IT) systems were to be produced using those devices exhibiting the greatest performance potential and suitability for integration.The device types chosen for investigations were:pseudomorphic high electron mobility transistors (HEMT) (gallium indium arsenic channels grown strained on gallium arsenic substrates);lattice matched HEMTs (aluminium indium arsenic barriers and gallium indium arsenic channels grown lattice matched on indium phosphorus substrates);gallium indium arsenic junction field effect transistors (JFET);pseudomorphic gallium indium arsenic channel semiconductor insulator semiconductor field effect transistors (SISFET) on gallium arsenic or indium phosphorous substrates;barrier enhanced field effect transisitors (FET) and gallium indium arsenic.Examples of novel gallium indium arsenic transistors have been produced with microwave performances approaching world records. These devices were compared at a later stage for their use in the project's final demonstrators:a broadband 30 GHz amplifier;a 1 to 2 GHz pulse regenerator circuit;a 30 GHz divider;inverter and ring oscillator circuits.The project was completed successfully with all the demonstrators established. These could later form the basis of the building blocks for specific information technology (IT) subsystems.The device types chosen for investigation were: - pseudomorphic HEMTs: GaInAs channels grown strained on GaAs substrates - lattice-matched HEMTs: AlInAs barriers and GaInAs channels grown lattice-matched on InP substrates - GaInAs junction FETs (JFETs) - pseudomorphic GaInAs channel SISFETs on GaAs or InP substrates - barrier-enhanced FETs and GaInAs. Dziedzina nauki natural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Program(-y) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Temat(-y) Data not available Zaproszenie do składania wniosków Data not available System finansowania Data not available Koordynator GEC Plessey Semiconductors plc Wkład UE Brak danych Adres Caswell NN12 8EQ Towcester Zjednoczone Królestwo Zobacz na mapie Koszt całkowity Brak danych Uczestnicy (7) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko FARRAN TECHNOLOGY Irlandia Wkład UE Brak danych Adres BALLINCOLLIG CORK Zobacz na mapie Koszt całkowity Brak danych FORTH RESEARCH CENTER OF CRETE Grecja Wkład UE Brak danych Adres MADZAPETAKI, 21, 1385 71110 HERAKLION Zobacz na mapie Koszt całkowity Brak danych Laboratoire d'Électronique Philips Francja Wkład UE Brak danych Adres 22 avenue Descartes 94453 Limeil-Brevannes Zobacz na mapie Koszt całkowity Brak danych PICOGIGA Francja Wkład UE Brak danych Adres 5 RUE DE LA REUNION 91952 LES ULIS Zobacz na mapie Koszt całkowity Brak danych Thomson CSF Francja Wkład UE Brak danych Adres Domaine de Corbeville 91404 Orsay Zobacz na mapie Koszt całkowity Brak danych UNIVERSITAT POLITECNICA DE MADRID Hiszpania Wkład UE Brak danych Adres CAMPUS DE MONTEGANCEDO 28660 MADRID Zobacz na mapie Koszt całkowity Brak danych Université de Lille I (Université des Sciences et Technologies de Lille Flandres Artois) Francja Wkład UE Brak danych Adres Domaine Universitaire Scientifique 59655 Villeneuve d'Ascq Zobacz na mapie Koszt całkowity Brak danych
