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Contenu archivé le 2022-12-23

AHP crucibleless crystal growth: method development and investigation of faceted dielectric crystal growth

Objectif

Large high-quality dielectric single crystals are needed for a variety of hi-tech optical, acoustical and other applications. A purely experimental, trial-and-error approach to the design of specific crystal growth systems is now known to be a thing of the past. Advanced manufacturers routinely employ combined computational and experimental predictive methods when designing and optimizing growth systems. However, well established for growth of semiconductor materials, this approach is still new when designing facilities for growth of dielectrics.

The highly nonlinear and three-dimensional nature of radiative heat transport and faceting phenomena, associated with dielectric crystal growth, has hampered investigations of such growth facilities. Having said this, we should mention that significant advances in the study of growth of semitransparent faceted single crystals have been made during the INTAS project 00-263, using both experimental and numerical approaches. Unique experimental methods capable of accurate, spatially resolved, interfacial undercooling measurements have been developed.

New numerical approaches to study of faceting phenomena in two-and-three dimensional geometries have been developed and applied. Detailed, state-of-the-art methods for calculation of radiative heat transport during the growth of semitransparent crystals with diffuse or specular boundaries have also been developed. In this proposed project we intend to develop a novel low-cost crucibleless AHP method for the growth of large Bi4Ge3O12, Bi12GeO20, Bi12SiO20 and CzI(Tl) crystals with arbitrary cross-sectional shapes as a first step for development of the relevant crystal growth technology.

We will base the development of this the technology mainly on:
- fundamental investigations of faceting phenomena, both from an experimental and from a computational point of view,
- fundamental analyses of radiative transport in realistic relevant geometries,
- determination of relevant thermo-physical and optical properties using both measurements and new support software,
- development of methods for optimization of the growth process,
- development of fast simplified models of the growth process to be used in real time to control the thermal conditions by programming the multi-section AHP heater and the position and the aperture of the diaphragm that regulates radiative heat transfer through the growing crystal.

The proposed project will advance current understanding of science and technology associated with the growth of dielectric single crystals. Areas in which advancement is expected include: coupled transport phenomena and interfacial kinetics, data associated with thermo-physical and optical properties of relevant materials, numerical analysis of faceting phenomena, numerical analysis of radiative heat transport in complex domains with non-trivial boundary properties, novel AHP crystal growth method (instrumentation, control and basic approach to crystal growth)

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Régime de financement

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Coordinateur

TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY
Contribution de l’UE
Aucune donnée
Adresse
TECHNION CITY
HAIFA
Israël

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Coût total
Aucune donnée

Participants (5)