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BIANCHO

Project ID: 257974
Gefördert unter

BIsmide And Nitride Components for High temperature Operation

Von 2010-07-01 bis 2014-07-31, Abgeschlossenes Projekt | BIANCHO Website

Projektdetails

Gesamtkosten:

EUR 2 876 450

EU-Beitrag:

EUR 2 189 999

Koordiniert in:

Ireland

Aufruf zur Vorschlagseinreichung:

FP7-ICT-2009-5See other projects for this call

Finanzierungsprogramm:

CP - Collaborative project (generic)

Description

BIANCHO will develop photonic components designed to significantly reduce power consumption at the component and system level in advanced communication systems, thereby saving significant electricity, and enabling unlimited bandwidth through integration, more optical processing and very high spectral-density photonic transmission.

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Current telecomm components suffer severely from intrinsic losses. Around 80% of electrical power is wasted in a 1.55?m laser chip as heat. Most systems require thermo-electric coolers and an air-conditioned environment, further increasing the energy budget by over an order of magnitude. The losses are due to Auger recombination in semiconductor lasers and optical amplifiers (SOAs), and due to the temperature dependence of the energy gap in electro-absorption modulators (EAMs). Incremental approaches to overcome these problems have reached their limits.

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We propose a radical change, to manipulate the electronic band structure of novel dilute bismide and dilute nitride alloys of GaAs and InP to eliminate Auger recombination and dramatically reduce the temperature dependence of the energy gap. This allows us to research, develop, test and demonstrate uncooled EAMs, highly efficient uncooled lasers and SOAs. These properties are also highly beneficial for high speed photodiodes as required in transceivers, as will be demonstrated.BIANCHO brings together leading European groups with complementary expertise in epitaxy, device physics, band structure modelling and advanced design and fabrication, in a well focused consortium of exceptionally high quality. \\n\\nThe project will strongly emphasise the protection of intellectual property and aggressive dissemination of results to maximize their impact. The team includes a key European component manufacturer (CIP), well connected to European and international network and system operators, providing a clear route to successful exploitation and commercialization of the technology. \\n

Ziel

BIANCHO will develop photonic components designed to significantly reduce power consumption at the component and system level in advanced communication systems, thereby saving significant electricity, and enabling unlimited bandwidth through integration, more optical processing and very high spectral-density photonic transmission.
Current telecomm components suffer severely from intrinsic losses. Around 80% of electrical power is wasted in a 1.55?m laser chip as heat. Most systems require thermo-electric coolers and an air-conditioned environment, further increasing the energy budget by over an order of magnitude. The losses are due to Auger recombination in semiconductor lasers and optical amplifiers (SOAs), and due to the temperature dependence of the energy gap in electro-absorption modulators (EAMs). Incremental approaches to overcome these problems have reached their limits. We propose a radical change, to manipulate the electronic band structure of novel dilute bismide and dilute nitride alloys of GaAs and InP to eliminate Auger recombination and dramatically reduce the temperature dependence of the energy gap. This allows us to research, develop, test and demonstrate uncooled EAMs, highly efficient uncooled lasers and SOAs. These properties are also highly beneficial for high speed photodiodes as required in transceivers, as will be demonstrated.
BIANCHO brings together leading European groups with complementary expertise in epitaxy, device physics, band structure modelling and advanced design and fabrication, in a well focused consortium of exceptionally high quality. The project will strongly emphasise the protection of intellectual property and aggressive dissemination of results to maximize their impact. The team includes a key European component manufacturer (CIP), well connected to European and international network and system operators, providing a clear route to successful exploitation and commercialization of the technology.

Kontaktangaben des Koordinators

Eoin O'REILLY
Tel.: +353 21 4904413
Fax: +353 21 4904402
E-Mail-Adresse

Koordinator

UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND, CORK
Ireland

EU-Beitrag: EUR 531 425


Western Road
- CORK
Ireland
Activity type: Higher or Secondary Education Establishments
Administrative Kontaktangaben: Conor Delaney
Tel.: +353 21 4904263
Fax: +353 21 4904058

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Teilnehmer

PHILIPPS UNIVERSITAET MARBURG
Germany

EU-Beitrag: EUR 687 552


BIEGENSTRASSE 10
35032 MARBURG
Germany
Activity type: Higher or Secondary Education Establishments
Administrative Kontaktangaben: Christian Veldman
Tel.: +49 6421 2826022
Fax: +49 6421 2826382

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VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS
Lithuania

EU-Beitrag: EUR 423 578


Savanoriu 231
02300 VILNIUS
Lithuania
Activity type: Research Organisations
Administrative Kontaktangaben: Jolanta Juodiene
Tel.: +370 5 2661 640
Fax: +370 5 2627123

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PUSLAIDININKIU FIZIKOS INSTITUTAS
Teilnahme ist beendet
Lithuania

EU-Beitrag: EUR 0


A. Gostauto
01108 Vilnius
Lithuania
Activity type: Research Organisations
Administrative Kontaktangaben: Arunas Krotkus
Tel.: +37052616821
Fax: +37052627123

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UNIVERSITY OF SURREY
United Kingdom

EU-Beitrag: EUR 374 477


Stag Hill
GU2 7XH GUILDFORD
United Kingdom
Activity type: Higher or Secondary Education Establishments
Administrative Kontaktangaben: SUE ANGULATTA
Tel.: +44 1483 682687
Fax: +44 1483 689567

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THE CENTRE FOR INTEGRATED PHOTONICS LIMITED
United Kingdom

EU-Beitrag: EUR 172 967


B55 ADASTRAL PARK, MARTLESHAM HEATH
IP5 3RE IPSWICH, SUFFOLK
United Kingdom
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative Kontaktangaben: Leigh Hepplethwaite
Tel.: +44 1473663111
Fax: +44 1473663295

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