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FP7 Atemox- organization of the work

ATEMOX

Project reference: 258547
Funded under: FP7-ICT

Advanced TEchnology MOdelling for eXtra-functionality devices

From 2010-07-01 to 2013-11-30

Project details

Total cost:

EUR 4 330 254

EU contribution:

EUR 3 024 035

Coordinated in:

Germany

Call for proposal:

FP7-ICT-2009-5

Funding scheme:

CP - Collaborative project (generic)

Extends the capabilities of TCAD to the modelling of leakage currents and technologies for low-leakage ultra-shallow junctions.

Within previous European projects process simulation has been brought to a state which allows in industrial environments a sufficiently accurate simulation of doping profiles in advanced CMOS technologies. Important electrical characteristics of core CMOS devices can now be predicted from scratch or with a minimum calibration effort. However, concepts towards low-power electronics, smart power applications, CMOS image sensors, and CMOS derivatives providing extra functionalities are still not sufficiently supported by TCAD. This concerns especially the prediction of leakage currents in such or parasitic devices caused by electrically active defects that remain after processing, and alternative doping techniques like plasma immersion ion implantation, low-temperature implantation, diversified cocktail implants and laser annealing which are considered for low-leakage ultra shallow junctions. The lack of suitable models that can be used in the early stages of industrial research and development inhibits the necessary cost reduction in the development of devices for which Europe is still at the forefront. The Atemox project will develop the full set of missing models and implement and include them into the Sentaurus TCAD platform of Synopsys so that they are of immediate value to the European semiconductor industry. The integrated models will finally be evaluated by STMicroelectronics with respect to industrial needs. To reach these ambitious goals, European companies active in complementary fields of competence  and leading European research institutes have formed a consortium that is well prepared to expertly cover all fields from experiment via characterization and modelling to simulation.

Objective

Within previous European projects with major contributions by the current proposers, process simulation has been brought to a state which allows in industrial environments a sufficiently accurate simulation of doping profiles in advanced CMOS technologies. Important electrical characteristics of core CMOS devices can now be predicted from scratch or with a minimum calibration effort. However, concepts towards low-power electronics, smart power applications, CMOS image sensors, and CMOS derivatives providing extra functionalities are still not sufficiently supported by TCAD. This concerns especially the prediction of leakage currents in such or parasitic devices caused by electrically active defects that remain after processing, and alternative doping techniques like plasma immersion ion implantation, low-temperature implantation, diversified cocktail implants and laser annealing which are considered for low-leakage ultra shallow junctions. The lack of suitable models that can be used in the early stages of industrial R&D inhibits the necessary cost reduction in the development of devices for which Europe is still at the forefront. Our project will develop the full set of missing models and implement and include them into the Sentaurus TCAD platform of Synopsys so that they are of immediate value to the European semiconductor industry. The integrated models will finally be evaluated by STMicroelectronics with respect to industrial needs. To reach these ambitious goals, a consortium of European companies active in complementary fields of competence (STMicroelectronics: device manufacturing, Synopsys: TCAD software, Exico, IBS: equipment production, Probion, Semilab: characterization) and leading European research institutes (CNR-IMM, CNRS-LAAS/CEMES, ETH-Zurich, Fraunhofer-IISB, Univ. Newcastle) has been formed which, together, is well prepared to expertly cover all fields from experiment via characterization and modelling to simulation.

Related information

Open Access

Coordinator

FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V
Germany
Hansastrasse 27C
80686 MUENCHEN
Germany
Administrative contact: Andrea Zeumann
Tel.: +49 89 1205 2723
Fax: +48 89 1205 7534
E-mail

Participants

SYNOPSYS SWITZERLAND LLC
Switzerland
Thurgauerstrasse
8050 ZURICH
Switzerland
Administrative contact: Erwin Bachmeier
Tel.: +49 89 99320 128
Fax: +49 89 99320 177
E-mail
EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZURICH
Switzerland
Raemistrasse
8092 ZUERICH
Switzerland
Administrative contact: Roland Siegwart
Tel.: +41446345355
Fax: +41446345351
E-mail
SYNOPSYS GMBH
Germany
KARL HAMMERSCHMIDT STR
85609 ASCHHEIM
Germany
Administrative contact: Erwin Bachmeier
Tel.: +49 89 99320 128
Fax: +49 89 99320 177
E-mail
Excico France
France
Quai des Grésillons
92230 Gennevilliers
France
Administrative contact: Hervé Besaucèle
Tel.: +33 1 41112725
Fax: +33 1 47933760
E-mail
STMICROELECTRONICS S.A.
France
Boulevard Romain Rolland 29
92120 MONTROUGE
France
Administrative contact: Veronique Mahut
Tel.: +33 4 76925419
Fax: +33 4 76925732
E-mail
PROBION ANALYSIS SARL
France
RUE DE FONTENAY
92220 BAGNEUX
France
Administrative contact: Maurice Quillec
Tel.: +33 146 120 500
Fax: +33 146 541 033
E-mail
ION BEAM SERVICES
France
RUE GASTON IMBERT PROLONGEE
13790 ROUSSET
France
Administrative contact: Philippe Mollard
Tel.: +33 4 42 53 89 29
Fax: +33 4 42 53 89 59
E-mail
STMICROELECTRONICS CROLLES 2 SAS
France
RUE JEAN MONNET 850
38920 CROLLES
France
Administrative contact: Veronique Mahut
Tel.: +33 4 76925419
Fax: +33 4 76925871
E-mail
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France
RUE MICHEL -ANGE
75794 PARIS
France
Administrative contact: Armelle Barelli
Tel.: +33 5 61 33 60 80
Fax: +33 5 62 17 29 01
E-mail
SEMILAB FELVEZETO FIZIKAI LABORATORIUM RESZVENYTARSASAG
Hungary
PRIELLE KORNELIA UTCA
1117 BUDAPEST
Hungary
Administrative contact: Anita Farkasinszki
Tel.: +36 1 382 4530
Fax: +36 1 382 4532
E-mail
CONSIGLIO NAZIONALE DELLE RICERCHE
Italy
PIAZZALE ALDO MORO
00185 ROMA
Italy
Administrative contact: Antonino La Magna
Tel.: +390955968220
Fax: +390955968312
E-mail
UNIVERSITY OF NEWCASTLE UPON TYNE
United Kingdom
Kensington Terrace
NE1 7RU NEWCASTLE UPON TYNE
United Kingdom
Administrative contact: Nicola Dolman
Tel.: +44 191 2228984
Fax: +44 191 2223401
E-mail
UNIVERSITE TOULOUSE III - Paul Sabatier
France
ROUTE DE NARBONNE
31062 TOULOUSE
France
Administrative contact: Carole MATTHIA
Tel.: +33 5 61 55 66 04
Fax: +33 5 61 55 73 13
E-mail
Record Number: 95316 / Last updated on: 2014-09-09