Project description
Nanoelectronics Technology
SQWIRE develops industry compatible CMOS technology based on novel Si nanowire transistor structures.
The aim of the SQWIRE project is to develop a disruptive, industry-compatible CMOS technology based on novel silicon nanowire transistor structures. As has been demonstrated both theoretically and experimentally, nanowire MOS transistors can be fabricated at wafer level using silicon-on-insulator (SOI) substrates and these novel devices have shown electrical properties that are comparable or even superior to those of regular transistors. Two such novel devices are the Gated Resistor (a junctionless transistor simulated, prototype fabricated and patented) and the variable-barrier tunnel transistor (VBT, simulated and patented). To obtain industrial validation, fabrication routes will be developed for these devices on novel 300 mm SOI wafers with silicon film thicknesses of only 10 nm. These routes will be underpinned by process development targeting atom-scale control of the silicon film thickness across the wafer. Device performance will be characterised at die-level and evaluated in a statistically meaningful manner at wafer level. The extracted parameters will serve as the basis for the development of a compact model of the Gated Resistor devices, which can be used for further circuit design and the validation of advanced numerical simulations. The fabrication process for the first device (Gated Resistor) is less complex and more flexible than that of regular transistors. It has the potential of increasing yield and reducing the price of integrated circuits. Furthermore, the Gated Resistor offers the promise of superior scaling to sub-22 nm dimensions compared to regular transistors. In addition, the process can easily be implemented in semiconductor materials other than silicon. The second device (Variable Barrier Transistor) is capable of providing subthreshold slopes sharper than any conventional transistor. This permits one to reduce the supply voltage of integrated circuits, and hence their energy consumption.
The aim of the SQWIRE project is to develop a disruptive, industry-compatible CMOS technology based on novel silicon nanowire transistor structures. The co-ordinator has demonstrated both theoretically and experimentally that nanowire MOS transistors can be fabricated at wafer level using silicon-on-insulator (SOI) substrates. These novel devices have shown electrical properties that are comparable or even superior to those of regular transistors.Two such novel devices are the Gated Resistor (a junctionless transistor simulated, prototype fabricated and patented) and the variable-barrier tunnel transistor (VBT, simulated and patented). To obtain industrial validation, fabrication routes will be developed for these devices on novel 300 mm SOI wafers with silicon film thicknesses of only 10 nm. These routes will be underpinned by process development targeting atom-scale control of the silicon film thickness across the wafer.Device performance will be characterised at die-level and evaluated in a statistically meaningful manner at wafer level. The extracted parameters will serve as the basis for the development of a compact model of the Gated Resistor devices, which can be used for further circuit design and the validation of advanced numerical simulations.The fabrication process for the first device (Gated Resistor) is less complex and more flexible than that of regular transistors. It has the potential of increasing yield and reducing the price of integrated circuits. Furthermore, the Gated Resistor offers the promise of superior scaling to sub-22 nm dimensions compared to regular transistors. In addition, the process can easily be implemented in semiconductor materials other than silicon. The second device (Variable Barrier Transistor) is capable of providing subthreshold slopes sharper than any conventional transistor. This permits one to reduce the supply voltage of integrated circuits, and hence their energy consumption.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: https://op.europa.eu/en/web/eu-vocabularies/euroscivoc.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: https://op.europa.eu/en/web/eu-vocabularies/euroscivoc.
- natural sciences physical sciences electromagnetism and electronics semiconductivity
- natural sciences chemical sciences inorganic chemistry metalloids
You need to log in or register to use this function
We are sorry... an unexpected error occurred during execution.
You need to be authenticated. Your session might have expired.
Thank you for your feedback. You will soon receive an email to confirm the submission. If you have selected to be notified about the reporting status, you will also be contacted when the reporting status will change.
Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Topic(s)
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Call for proposal
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
FP7-ICT-2009-5
See other projects for this call
Funding Scheme
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Coordinator
T12 YN60 Cork
Ireland
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.